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Non-evaporable thin-film getter with controllable activation temperature and its application

A technology for activating temperature and getter, applied in electrical components, fluid velocity measurement, gaseous chemical plating, etc., can solve the problems of limiting the service life of components and maintaining the vacuum degree of the cavity, so as to prolong the service life and maintain the vacuum degree, increase the effect of inspiratory volume

Active Publication Date: 2020-09-08
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] (3) The unsustainable air absorption of the thin-film getter limits the service life of components: there is a certain air leakage in the sealing ring in the wafer-level vacuum package, so the thin-film getter is required to continuously inhale under long-term working conditions to keep the air The vacuum degree of the cavity is compatible with the thin film getter technology and the wafer level packaging process. The existing thin film getter is difficult to maintain the vacuum degree of the cavity for a long time

Method used

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  • Non-evaporable thin-film getter with controllable activation temperature and its application
  • Non-evaporable thin-film getter with controllable activation temperature and its application
  • Non-evaporable thin-film getter with controllable activation temperature and its application

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Embodiment 1

[0046] Such as figure 1 As shown, a non-evaporable thin film getter with controllable activation temperature of the present invention includes a first thin film getter layer 301 and a temperature control layer 302 . Wherein, the first thin film getter layer 301 has a porous structure, and the temperature control layer 302 has a dense structure. The double-layer thin film structure of the non-evaporative thin film getter needs to be continuously deposited under the condition of not breaking the vacuum of the cavity, so as to prevent the formation of a natural oxide layer after the thin film getter contacts with air. Its specific production process is as follows:

[0047] (1) After photolithography, use ICP (Inductively Coupled Plasma, Inductively Coupled Plasma) to etch the cavity on the wafer, where the wafer is SiO 2 and Si multilayer materials (SiO 2 / Si).

[0048] (2) The sealing ring is deposited by electrochemical deposition and metal lift-off process after photolitho...

Embodiment 2

[0052] Such as figure 2 As shown, a non-evaporable thin film getter with controllable activation temperature of the present invention includes a first thin film getter layer 301, a temperature control layer 302, a second thin film getter layer arranged in sequence from bottom to top 305 and getter protective layer 303; wherein, the first thin film getter layer 301 is a porous structure, the temperature control layer 302 is a dense structure, and the second thin film getter layer 305 is a dense structure; the getter protection Layer 303 is a dense structure. The four-layer thin film structure of the non-evaporative thin film getter needs to be continuously deposited under the condition of not breaking the vacuum of the cavity, so as to prevent the formation of a natural oxide layer after the thin film getter contacts with air. Its specific production process is as follows:

[0053] (1) After photolithography, use ICP to etch the cavity on the wafer, where the wafer is SiO 2...

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Abstract

The invention relates to an activation temperature-controllable non-evaporable thin film getter, the activation temperature-controllable non-evaporable thin film getter comprises a first thin film getter layer and a temperature control layer thereon, wherein the first thin film getter layer is a porous type structure and has thickness of 50 nanometers to 5 micrometers, materials of the temperaturecontrol layer comprise one or more of a VB group transition metal, a IIIB group transition metal and a VIII group transition metal, and thickness of the temperature control layer is 20 nanometers to1 micrometer. The thin film getter provided by the invention also has functions of having controllable activation temperature and being capable of gettering continuously after being activated, and a second thin film getter layer and a getter protection layer are arranged above the temperature control layer. Thickness of the second thin film getter layer is 10-50 nanometers; the getter protection layer is a compact type structure, materials of the getter protection layer comprise Au, Sn, Pt, Ni, Pd, Ag, Cu, Ir, In, and so on, and thickness of the getter protection layer is 10-50 nanometers. Thethin film getter can be used for vacuum encapsulation.

Description

technical field [0001] The invention relates to the technical field of encapsulation of a micro-motor system, in particular to a non-evaporable film getter with controllable activation temperature and its application. Background technique [0002] In vacuum electronic technology, the residual active gas will have an important impact on the reliability, stability and service life of MEMS (micro-electromechanical systems) devices such as microbolometers, gyroscopes, and micro-mechanical resonators, often leading to device performance One of the main reasons for decline or even failure. Therefore, these devices usually need to be packaged in a vacuum chamber, and in order for the related MEMS device to work reliably throughout the life cycle, the vacuum retention of the package is very critical. Nowadays, as the volume of devices continues to shrink, it is an inevitable development trend of vacuum packaging to use thin-film getters to adsorb residual active gas molecules to ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81B7/02B81C1/00
CPCB81B7/0038B81B7/02B81C1/00285
Inventor 吴鸣
Owner SUZHOU UNIV