Vapor deposition method for silicon-doped graphene

Abstract

The invention discloses a vapor deposition method for silicon-doped graphene, which comprises the steps: S1, adding graphene powder into absolute ethyl alcohol, performing a sealed ultrasonic reactionfor 30 to 60min, and after cooling, obtaining graphene suspension; S2, adding polyethylene glycol into the graphene suspension, mechanically stirring to a completely dissolved state to obtain graphene dispersed alcohol solution; S3, placing the graphene dispersed alcohol solution into a reduced pressure distillation reaction kettle to perform a reduced pressure distillation reaction for 2 to 5h to obtain viscous fluid, and drying to obtain fluffy graphene blocks; S4, adding the graphene blocks into a reaction kettle, heating and standing for 20 to 40min, then filling silane gas to perform a reaction for 3 to 8h, and naturally cooling to obtain graphene adsorption blocks; S5, adding the graphene adsorption blocks into the absolute ethyl alcohol to perform an ultrasonic reaction for 30 to 60min, and after filtering, obtaining silicon-doped precipitates; S6, performing a heating and pressurizing reaction on the silicon-doped precipitates in a hydrogen reaction kettle for 3 to 6h, and after cooling, obtaining the silicon-doped graphene. The vapor deposition method is simple in process, high in controllability of a silicon doping rate and applicable to extensive production.

Description

technical field [0001] The invention belongs to the technical field of graphene, in particular to a vapor phase deposition method of silicon-doped graphene. Background technique [0002] The discovery of graphene confirmed the stable existence of two-dimensional materials and opened up a new stage of research on two-dimensional materials. The carrier mobility can reach 200,000cm 2 / V.s, which provides the basis for its ability to manufacture high-frequency electrons, and the absorption of light by single-layer graphene is 2.3%, which makes it an important material for optoelectronic device research. However, while graphene has excellent photoelectric properties, it has a very serious defect, that is, the band gap is zero, which limits its application in micro-nano optoelectronic devices. In current experiments, methods such as preparing graphene nanobelts are usually used to open the energy bands of graphene, but the energy band sizes are all below 300meV. In addition, sc...

AI Technical Summary

Problems solved by technology

The disadvantage of this type of doping method is that the properties of graphene after doping will change over time and cannot exist stably

In contrast, the substitutional doping method in which silicon atoms replace carbon atoms in graphene can keep the properties of doped graphene more stable, and silicon-doped graphene has not yet been obtained.