Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of thin film transistor, its manufacturing method and display panel

A thin-film transistor and thin-film technology, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve the problems that affect the display effect of display devices and the different carrier mobility.

Active Publication Date: 2021-01-22
BOE TECH GRP CO LTD +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the thin film transistor is bent, the channel region near the interface between the active layer and the gate insulating layer will be affected by the bending stress, which will cause the carrier mobility to be different from that before bending, thereby affecting the display effect of the display device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of thin film transistor, its manufacturing method and display panel
  • A kind of thin film transistor, its manufacturing method and display panel
  • A kind of thin film transistor, its manufacturing method and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] figure 1 As shown in , it is a schematic structural diagram of the thin film transistor provided by Embodiment 1 of the present invention. Specifically, it can be formed in the following way figure 1 The thin film transistor shown.

[0080] Before manufacturing the thin film transistor, the flexible substrate 101 should be bonded to the hard substrate or directly spin-coat the flexible solution on the hard substrate to form the flexible substrate 101, so as to facilitate the preparation of the thin film transistor. After all the thin film transistors are prepared, the flexible substrate 101 is peeled off from the hard substrate to form a figure 1 The flexible thin film transistor shown. details as follows:

[0081] A layer of polyimide (PI) substrate is spin-coated on the glass substrate, and then annealed and dried by nitrogen gas to form a flexible substrate 101 made of PI material.

[0082] Depositing an Al electrode by DC magnetron sputtering on a flexible subs...

Embodiment 2

[0090] figure 2 , which is a schematic structural diagram of the thin film transistor provided in Embodiment 2 of the present invention. Different from the TFT provided in Embodiment 1, the stress regulating layer in the TFT provided in Embodiment 2 of the present invention simultaneously covers the source 1051 , the drain 1052 , and the channel region between them.

[0091] Specifically, the manufacturing process of the thin film transistor provided in the second embodiment of the present invention is similar to that of the first embodiment, and the repeated parts will not be repeated. The difference is that it is necessary to finely control the thickness of the stress regulation layer 106 at different positions according to the different film layer structures under the stress regulation layer 106, so that the thicknesses of the first interface S1, the second interface S2, and the third interface S3 The bending stress is as small as possible, even zero, so that not only the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a film transistor and a manufacturing method thereof, and a display panel. The film transistor comprises a flexible substrate, multiple film layers arranged on the flexible substrate and further comprises a stress control layer arranged at a side of the source and drain layer facing away from the flexible substrate, wherein the film layers are sequentially a gate, a gate insulation layer, an active layer, a source and a drain, orthographic projection of the stress control layer on the flexible substrate covers at least orthographic projection of a channel region betweenthe source and the drain and corresponding to the active layer, and the stress control layer is used for reducing bending stress of a first interface between the gate insulation layer and the activelayer. The film transistor is advantaged in that through the stress control layer of which orthographic projection on the flexible substrate covers at least orthographic projection of the channel region, the bending stress of the first interface between the gate insulation layer and the active layer can be reduced, the bending stress loaded to the channel region is relatively small, and influenceof the bending stress on the channel region is effectively ameliorated.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof and a display panel. Background technique [0002] With the development of display technology, flexible display has become a hotspot in the fields of automotive dashboards, watches and foldable mobile phones. Generally, each pixel of a flexible display requires at least two thin film transistors (Thin Film Transistor, TFT) and a capacitor to drive. Because the biggest feature of flexible display is the bendability of the device, this requires that the thin film transistor can still maintain good electrical performance under the action of bending stress. [0003] However, the thin film transistor mainly controls the carriers in the channel region through the gate voltage, so as to realize the switching of the thin film transistor. When the thin film transistor is bent, the channel region near the interface between the activ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/66969H01L29/78606H01L29/7869
Inventor 曾勇沈仰灿祝培涛张亚娇刘正吴洪江
Owner BOE TECH GRP CO LTD