Vertical-structure light-emitting diode and fabrication method thereof

Abstract

The invention relates to a vertical-structure light-emitting diode and a fabrication method thereof. The vertical-structure light-emitting diode comprises an epitaxial layer, an ITO layer, a reflective layer and a metal barrier layer which are sequentially grown, wherein the epitaxial layer is formed by sequentially growing an N-GaN layer, a multi-quantum well layer and a P-GaN layer, an N-electrode is fabricated on the N-GaN layer, an insulation layer is further grown between the epitaxial layer and the ITO layer, and the insulation layer is grown on the P-GaN layer in a patterning way. Relatively large resistance is formed by growing the insulation layer between the epitaxial layer and the ITO layer, so that a current is expanded from the N-electrode very well, the problem of current congestion is solved, blue leakage is improved, and lamination films with different refractivity are formed to improve the brightness of the light-emitting diode; and moreover, the situation that the metal barrier layer is etched can be prevented, and the reliability of the light-emitting diode is effectively improved.

Description

technical field [0001] The invention relates to a light-emitting diode and a preparation method thereof, in particular to a light-emitting diode with a vertical structure and a preparation method thereof, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] Because the GaN (gallium nitride)-based vertical structure LED (Light Emitting Diode, light-emitting diode) has the advantages of good heat dissipation, high current carrying capacity, high luminous intensity, low power consumption, and long life, it is widely used in general lighting and landscape lighting. , special lighting, and automotive lighting are widely used, making GaN-based vertical structure LEDs a research hotspot for semiconductor devices. [0003] Such as figure 1 As shown, it is a light-emitting diode with a GaN-based vertical structure in the prior art, which consists of an EPI (epitaxial) layer 1, an ITO (indium tin oxide) layer 2, a REF (reflective) layer 3, ...

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Problems solved by technology

However, the disadvantage of this process is that if the Asher machine process or equipment is abnormal and the P-GaN layer 13 is not completely destroyed, it will cause blue leakage, which is not conducive to white light packaging and testing.

At the same time, the N-Mesa (N-mesa) of the existing process is dry etched to the Barrier layer 4, which is very easy to etch the metal, which causes abnormalities in the reliability of small currents

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