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Device and method for focusing cold plasma to process 3D object

A cold plasma, 3D technology, applied in the direction of plasma, electrical components, etc., can solve the problems of small processing range, limited planar material processing, low processing efficiency, etc., and achieve industrial transformation, easy operation, and high reliability. Effect

Inactive Publication Date: 2018-07-24
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the flat-plate DBD and the single tube-type jet are limited by the small discharge structure and low processing efficiency; while the jet array generally arranges the jet tubes linearly, and through optimized adjustment and coupling, the jet array produces uniformity. The large-area low-temperature plasma can increase the processing area to a certain extent, but it is still limited to the processing of planar materials

Method used

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  • Device and method for focusing cold plasma to process 3D object
  • Device and method for focusing cold plasma to process 3D object
  • Device and method for focusing cold plasma to process 3D object

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Direct modification of the surface of the cylindrical copper electrode: use six dielectric barrier tubes 10 to simultaneously excite the plasma to directly treat the surface of the copper electrode, set the total flow rate of the discharge excitation gas argon to 4slm, select the nanosecond pulse excitation power supply for the power supply 13, and apply a voltage of 12.3kV, frequency 1400Hz voltage, discharge under atmospheric pressure to generate low temperature plasma.

Embodiment 2

[0055] Deposition of TiO on the Surface of Cylindrical Copper Electrode 2 Thin film: use six dielectric barrier tubes 10 to simultaneously stimulate plasma to deposit TiO on the surface of copper electrodes 2 thin film, using TiCl 4 As a precursor, heat the scrubber bottle containing the precursor to 70°C in an oil bath, set the flow rate of the discharge excitation gas argon to 4slm, the flow rate of the carrier gas to 40sccm, and the flow rate of air to 40sccm, and heat the copper electrode to 100°C; The nanosecond pulse power supply is used as the excitation source, the discharge voltage is 13kV, the frequency is 13kHz, and the deposition process is 3min. After treatment, AFM (atomic force microscope) was used to observe and analyze the electrode surface. The test results show that the surface of the electrode is relatively rough before treatment, and there are a large number of pointed protrusions on the surface. At the same time, the surface of the electrode is randomly...

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Abstract

The invention discloses a device and a method for focusing a cold plasma to process a 3D object. The device comprises a jet flow support, dielectric barrier tubes, tungsten electrodes, a support shaft, a mobile mechanical arm, a sample fastener, a gas circuit chamber and a line chamber, wherein the cross section of the jet flow support is a regular polygon cylinder and a vertical through hole is arranged at the center position of a thickness direction; there are several dielectric barrier tubes, and one end of each dielectric barrier tube passes through the side surface of the corresponding jet flow support and is inserted into the vertical through hole of the jet flow support; the tungsten electrodes are fixedly arranged at the central axes of the dielectric barrier tubes, and the numberis the same with the number of the dielectric barrier tubes; the support shaft is vertically arranged at one side of a jet flow array; one end of the mobile mechanical arm is movably connected to thesupport shaft, and the other end of the mobile mechanical arm is connected to the sample fastener; the lower end of the sample fastener is provided with an insulation clamping structure used for clamping a sample to be processed; and the uniform cross sections of the gas circuit chamber and the line chamber are regular-polygon hollow cylinders, the gas circuit chamber is arranged on the upper endof the line chamber, and the jet flow support is nested in the gas circuit chamber.

Description

technical field [0001] The invention relates to the technical field of plasma processing object surfaces, in particular to a device and method for processing 3D objects with focused cold plasma. Background technique [0002] At present, atmospheric pressure low-temperature plasma has been widely used in the field of material surface modification. Because the plasma contains a large number of excited atoms, molecules and free radicals, etc., it is very easy to have physical and chemical reactions with the sample surface, so as to achieve the goal without changing the overall surface of the material. The purpose of improving certain properties of the surface under the premise of characteristics. Atmospheric pressure plasma jet is one of the most widely used methods of generating plasma at present. The plasma is guided from the discharge area to the surface of the sample to be treated through the working gas, thereby reducing the etching and damage of the sample surface by high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/24
CPCH05H1/2406H05H1/2431
Inventor 邵涛王瑞雪徐晖章程严萍
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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