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Semiconductor wafer processing method

A processing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, metal processing equipment, manufacturing tools, etc., to achieve the effect of alleviating curing shrinkage, reducing surface ripples, and alleviating the impact of fluidity

Inactive Publication Date: 2018-07-31
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Usually, for the purpose of removing the surface waviness of the semiconductor wafer, that is, improving the nano-topography, a curable material such as soft resin is applied to one side (first side) of the wafer to form a coating layer. This forms a flat reference surface, which is sucked to support the wafer without elastically deforming it, and the other surface (second surface) of the wafer is ground.

Method used

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  • Semiconductor wafer processing method
  • Semiconductor wafer processing method
  • Semiconductor wafer processing method

Examples

Experimental program
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Effect test

Embodiment 1

[0050] First, a silicon single crystal ingot is cut (sliced) by a multi-wire saw device using a fixed abrasive grain system to produce a plurality of silicon wafers with a diameter of 300 mm. Then, frequency analysis is performed on the surface height of the first surface 11 of the wafer 10, and the amplitude of the surface waviness 11a (the amplitude of the surface waviness of the material) of the first surface 11 of the wafer 10 in the wavelength range of 10 to 100 mm is selected to be 0.5 μm or more. and less than 2.0 μm wafer 10 ( Figure 4 (a)). After the first surface 11 of the selected wafer 10 is coated with a UV curable resin as a curable material through the first coating layer forming process ( Figure 4 (b)) The curable material made of the UV curable resin is cured in the first coating layer curing step to form the first coating layer 21 on the first surface 11 of the wafer 10 . Next, on the surface of the first coating layer 21 formed on the first surface 11 of...

Embodiment 2

[0052] A double-sided polished wafer was obtained in the same manner as in Example 1 except that the coating layer forming step and the coating layer curing step were repeated three times. This wafer was referred to as Example 2.

Embodiment 3

[0054] Carry out frequency analysis on the surface height of the first surface of the wafer, except that the amplitude of the surface waviness on the first surface of the wafer (the amplitude of the surface waviness of the material) in the wavelength region of 10 to 100 mm is selected to be 2.0 μm or more, and the implementation In Example 1, a double-sided polished wafer was obtained in the same manner. This wafer was referred to as Example 3.

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Abstract

Disclosed is a semiconductor wafer processing method wherein, firstly, a thin disc-like wafer is manufactured by slicing a semiconductor single crystal ingot (slicing step), then, a planarized coatinglayer is formed by applying a curable material to the whole first surface of the wafer (coating layer forming step), and then the coating layer is cured (coating layer curing step). Next, a wafer second surface on the reverse side of the first surface is flatly ground by means of a grinding apparatus, then, the coating layer is removed from the first surface of the wafer. Furthermore, the first surface of the wafer is flatly ground by means of the grinding apparatus. The surface height of the first surface of the wafer after the slicing step and before the coating layer forming step is subjected to frequency analysis, and when the amplitude of the surface waving of the first surface of the wafer in a wavelength region of 10-100 mm is equal to or more than 0.5 [mu]m, the coating layer forming step and the coating layer curing step are repeated a plurality of times.

Description

technical field [0001] The present invention relates to a method of processing a semiconductor wafer, and more particularly to a processing method for planarizing the surface of a semiconductor wafer. In addition, this international application claims priority based on Japanese Patent Application No. 206066 (Japanese Patent Application No. 2015-206066) filed on October 20, 2015, and the entire contents of Japanese Patent Application No. 2015-206066 are incorporated into this international application. Background technique [0002] Conventionally, in order to form a fine pattern on a semiconductor wafer by photolithography, it was necessary to planarize the surface of the wafer. In particular, surface waviness called "nanotopography" is the unevenness of the wafer surface with a spatial wavelength component of about 0.2 to 20 mm. Recently, a technique for improving the flatness of a semiconductor wafer by reducing this nanotopography has been proposed. propose. As such a fl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B7/04B24B7/22B24B27/06
CPCB24B7/04B24B7/228B24B27/0633B24B37/107H01L21/02013B24B7/22B24B27/06H01L21/304H01L21/324H01L21/7806
Inventor 田中利幸桥本靖行
Owner SUMCO CORP
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