Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of low defect graphene and preparation method thereof

A graphene, low-defect technology, applied in graphene, chemical instruments and methods, nano-carbon, etc., can solve problems such as complex processes, achieve broad application prospects, high electrical conductivity, and significant technical effects

Active Publication Date: 2022-04-29
ZHENGZHOU NEW CENTURY MATERIALS GENOME INST CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] This method requires multi-step reactions such as microwave heating reaction, reflux reaction, melting, and annealing. The process is very complicated, and various inorganic and organic substances need to be added as additives, and various impurities are easily introduced after the reaction.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of low defect graphene and preparation method thereof
  • A kind of low defect graphene and preparation method thereof
  • A kind of low defect graphene and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The low-defect graphene preparation method of the present embodiment comprises the steps:

[0040] 1) Take graphene oxide (S0) with a carbon-to-oxygen atomic ratio of 2.0:1 in the structure, place the graphene oxide in a rapid annealing furnace, rapidly raise the temperature to 500°C at a heating rate of 50°C / s, keep it warm for 30min, and cool To room temperature, obtain the reduced graphene oxide (S1) of preliminary reduction;

[0041] 2) Place the preliminary reduced graphene oxide obtained in step 1) in microwave equipment for microwave irradiation, the frequency of the microwave is 915MHz, the power is 20kW, and the time of microwave irradiation is 30s to obtain high-quality graphite with ultra-low defects olefin product (S2).

Embodiment 2

[0043] The low-defect graphene preparation method of the present embodiment comprises the steps:

[0044] 1) Take graphene oxide with a carbon-to-oxygen atomic ratio of 2.0:1 in the structure, place the graphene oxide in a muffle furnace, keep it warm at 300°C for 30s, cool to room temperature, and take it out to obtain the initially reduced reduced graphene oxide ;

[0045]2) Place the preliminary reduced graphene oxide obtained in step 1) in microwave equipment for microwave irradiation, the frequency of the microwave is 915MHz, the power is 40kW, and the time of microwave irradiation is 60s to obtain high-quality graphite with ultra-low defects olefin products.

Embodiment 3

[0047] The low-defect graphene preparation method of the present embodiment comprises the steps:

[0048] 1) Take graphene oxide with a carbon-to-oxygen atomic ratio of 2.0:1 in the structure, and heat the graphene oxide with light waves at a temperature of 300°C for 120s. After cooling to room temperature, take it out to obtain a preliminary reduction reduced graphene oxide;

[0049] 2) Place the preliminary reduced graphene oxide obtained in step 1) in microwave equipment for microwave irradiation, the frequency of the microwave is 915MHz, the power is 40kW, and the time of microwave irradiation is 50s to obtain high-quality graphite with ultra-low defects olefin products.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a low-defect graphene and a preparation method thereof, belonging to the technical field of graphene preparation. The method for preparing low-defect graphene of the present invention comprises the following steps: reducing graphene oxide to obtain reduced graphene oxide; and subjecting the obtained reduced graphene oxide to microwave irradiation for more than 10s to obtain the obtained product. In the low-defect graphene preparation method of the present invention, the graphene oxide is initially reduced, and the graphene oxide after the initial reduction has a large number of graphene six-membered ring crystal nuclei. Then the pretreatment material with a large number of graphene six-membered ring crystal nuclei is irradiated with microwaves, and the carbon atoms in the initially reduced graphene oxide can quickly absorb the energy of microwaves, with the six-membered ring crystal nuclei as the core, quickly Rearrange growth, repair the defects of graphene oxide, and obtain high-quality graphene products with ultra-low defects.

Description

technical field [0001] The invention relates to a low-defect graphene and a preparation method thereof, belonging to the technical field of graphene preparation. Background technique [0002] In the graphene structure, carbon atoms are represented by Sp 2 Hybrid combination, and honeycomb six-member ring as the basic unit arrangement, forming a single-layer (or few-layer) two-dimensional layered crystal structure. Because of its special physical and chemical properties, it has received more and more attention and attention from all over the world. Studies have found that graphene has excellent electrical and thermal conductivity, and has ultra-high mechanical strength, transparency and specific surface area, as well as very good thermal and chemical stability. Graphene plays an important role in improving the specific capacity, fast charging and discharging performance, and cycle stability of energy storage devices (metal ion batteries, supercapacitors, etc.), and has a wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184C01B32/194
CPCC01B2204/22
Inventor 邵国胜张鹏张世杰
Owner ZHENGZHOU NEW CENTURY MATERIALS GENOME INST CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com