Method for improving stability of preparing single crystalline diamond through MPCVD (Microwave Plasma Chemical Vapor Deposition)

A single crystal diamond, stability technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of more than single crystal diamond, single crystal diamond seed crystal heat dissipation deterioration, interruption of single crystal diamond growth, etc. problems, to achieve the effect of simple processing, flexible use, and improved heat dissipation capacity

Active Publication Date: 2018-08-03
湖北碳六科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the non-diamond phase on the opposite side of the single crystal diamond seed crystal accumulates to a certain extent, the heat dissipation of the single crystal diamond seed crystal will deteriorate, but the radiation heating of the single crystal diamond seed crystal by microwave plasma remains unchanged. In this case The temperature on the surface of the single crystal diamond seed crystal gradually increases, even exceeding the upper limit of the epitaxial growth temperature of single crystal diamond, thus directly interrupting the growth of single crystal diamond

Method used

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  • Method for improving stability of preparing single crystalline diamond through MPCVD (Microwave Plasma Chemical Vapor Deposition)
  • Method for improving stability of preparing single crystalline diamond through MPCVD (Microwave Plasma Chemical Vapor Deposition)
  • Method for improving stability of preparing single crystalline diamond through MPCVD (Microwave Plasma Chemical Vapor Deposition)

Examples

Experimental program
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Effect test

Embodiment 1

[0031] The size of the single crystal diamond seed crystal is: length 8mm, width 8mm, thickness 0.4mm. Open a small groove on the sample table where the single crystal diamond seed crystal is placed. The size of the small groove is between 3mm*3mm-6mm*6mm. Square or circular or other symmetrical sizes are acceptable, and the requirements are easy to process; the groove depth depends on Processing requirements control the depth between 0.2mm-0.4mm. Then drop a certain amount of liquid metal into the tank until it nearly fills the small tank or slightly overflows a small amount. Put the transparent single crystal diamond seed crystal on the liquid metal, and you can observe the wettability between the liquid metal and the single crystal diamond seed crystal. Full surface contact.

Embodiment 2

[0033] The size of the single crystal diamond seed crystal is: length 8mm, width 8mm, thickness 0.4mm. Open a large groove slightly larger than the length and width of the single crystal diamond at the position where the single crystal diamond seed crystal is placed on the sample stage, and then open a small groove at the bottom of the large groove. The size of the large groove is between 9mm*mm-12mm*12mm, the size of the small groove is between 3mm*3mm-6mm*6mm, square or round or other symmetrical sizes are acceptable, and it is required to be easy to process; this is due to the early drawing During the vacuum or later degassing process, the single crystal diamond seed crystal may be displaced due to the air flow surge during the gas flow inside the reaction chamber. Open a large groove and place the single crystal diamond seed crystal in the large groove to avoid large Amplitude displacement. Open a small groove again, drop into liquid metal, and mode is identical with embo...

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Abstract

The invention discloses a method for improving stability of preparing single crystalline diamond through MPCVD (Microwave Plasma Chemical Vapor Deposition). The method is characterized in that the temperature heat dissipation stability of a single crystalline diamond seed crystal is improved by utilizing the flowability and high heat conductivity of liquid-state metal, so that the production stability of the single crystalline diamond is improved. The specific embodiment is as follow: a small groove with a size which is slightly smaller than the length and width size of the single crystallinediamond is opened in a position for placing the single crystalline diamond seed crystal on a high-temperature-resisting metal sample platform, and a proper amount of the liquid-state metal is droppeduntil the liquid-state metal is fully distributed on the small groove; the single crystalline diamond seed crystal is put on the small groove to cover the liquid-state metal, so as to ensure that thecontact area between the single crystalline diamond seed crystal and the liquid-state metal is greater than 1 / 2 of the single crystalline diamond seed crystal at least.

Description

technical field [0001] The invention belongs to the technical field of diamond production and processing, and in particular relates to a method for improving the stability of single crystal diamond prepared by MPCVD. Background technique [0002] Microwave plasma chemical vapor deposition (MPCVD) has the advantages of no electrode pollution and uniform plasma, and is one of the preferred devices for preparing high-quality single crystal diamond. The steps of preparing single crystal diamond by MPCVD usually include: placing the high temperature resistant metal sample stage carrying the single crystal diamond seed crystal on the water-cooled substrate stage in the reaction chamber, and introducing a certain flow rate of hydrogen and carbon-containing gas into the reaction chamber Under certain working pressure conditions, microwaves are used to ionize a certain flow of carbon-containing gas sources into carbon-containing active groups, and then homoepitaxial growth is achieve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/20C30B30/00
CPCC30B25/205C30B29/04C30B30/00
Inventor 武迪陈贞君郑大平朱瑞肖景阳
Owner 湖北碳六科技有限公司
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