Pressure sensor and manufacturing method thereof

A pressure sensor and manufacturing method technology, applied in the field of MEMS, can solve problems such as complex process steps and poor process manufacturability, and achieve the effect of improving manufacturability

Active Publication Date: 2018-08-03
MEMSENSING MICROSYST SUZHOU CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the manufacturing process of the capacitive pressure sensor in the prior art involves a complex process of hollowing out the sacrificial silicon oxide layer and sealing the release hole to form a vacuum chamber, the process steps are relatively complicated, and the manufacturability of the process is poor.

Method used

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  • Pressure sensor and manufacturing method thereof
  • Pressure sensor and manufacturing method thereof

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Embodiment Construction

[0027] The specific implementation of the pressure sensor provided by the present invention and its manufacturing method will be described in detail below with reference to the accompanying drawings.

[0028] Please refer to figure 1 , is a schematic diagram of the module structure of the pressure sensor 100 according to a specific embodiment of the present invention.

[0029] The pressure sensor 100 includes a pressure sensing chip 101 , an application specific integrated circuit chip (ASIC) 102 and an output interface 103 . The pressure sensing chip 101 is a MEMS sensor. In this specific embodiment, the pressure sensing chip 101 is composed of four bridge arm capacitors, including a pair of sensing capacitors Cs and a pair of reference capacitors Cr. When the external air pressure changes, the sensing capacitance Cs of the pressure sensing chip 101 deforms, the sensing capacitance Cs changes, and the reference capacitance Cr does not change, and the output deltaC / C is pass...

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Abstract

The present invention relates to a pressure sensor and a manufacturing method thereof. The pressure sensor comprises: a substrate; a passivation layer located at the surface of the substrate; a firstlower electrode, a second lower electrode and a connection electrode which are located at the surface of the passivation layer, wherein the connection electrode is connected with the first lower electrode and the second lower electrode; a first upper electrode supported at the upper portion of the first lower electrode, wherein the first upper electrode and the first lower electrode form an inductive capacitor; a second upper electrode supported at the upper portion of the second lower electrode, wherein a support portion is arranged between the first upper electrode and the first lower electrode, and the second upper electrode and the second lower electrode form a reference capacitor; and an insulation layer covering the first upper electrode and the second upper electrode. The method provided by the invention is simple in step and can improve the process manufacturability.

Description

technical field [0001] The invention relates to the technical field of MEMS, in particular to a pressure sensor and a manufacturing method thereof. Background technique [0002] A pressure sensor is a transducer that converts a pressure signal into an electrical signal. [0003] According to different working principles, pressure sensors are mainly divided into piezoresistive, capacitive and piezoelectric. At present, piezoresistive pressure sensors are the mainstream technology of pressure sensors due to their high compatibility with semiconductor processes, simple manufacturing processes, and simple interface circuits. However, piezoresistive pressure sensors have disadvantages such as poor temperature characteristics, low sensitivity, and high power consumption, and are not suitable for some low-power consumption and high-precision applications. [0004] The capacitive pressure sensor itself has many advantages such as small size, low cost, good temperature characterist...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14
CPCG01L1/148
Inventor 李刚吕萍胡维
Owner MEMSENSING MICROSYST SUZHOU CHINA
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