Tunneling Field Effect Transistor and Manufacturing Method Thereof

Abstract

A tunneling field effect transistor and a manufacturing method thereof, the tunneling field effect transistor comprising a substrate (10); a source region (20) and a drain region (30) arranged on the substrate (10); the source region (20 ) and the drain region (30) is the channel (40), the source region (20) and the channel (40) form a pocket region (50), the source region (20) and the pocket region (50 ) contain the first type of dopant, the drain region (30) contains the second type of dopant; the gate stack layer (60), the gate stack layer (60) is arranged in the source region (20), the pocket region (50) And on the channel (40); sidewalls (70), the sidewalls (70) are arranged on both sides of the gate stack layer (60). The tunneling field effect transistor can reduce the subthreshold swing of the tunneling field effect transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a tunneling field effect transistor and a manufacturing method thereof. Background technique [0002] As the size of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) continues to shrink, power consumption and reliability of the device have become important factors restricting the development of integrated circuits. In order to reduce the power consumption of integrated circuits, Tunnel Field-Effect Transistor (TFET) has been extensively studied. In TFET, carriers are injected into the channel by the mechanism of interband tunneling, which can realize Smaller subthreshold swing (subthreshold swing refers to the amount of change in gate voltage required when the drain current of a transistor changes by an order of magnitude in the subthreshold state. The smaller the subthreshold swing, the drain current increases with the gate voltage. The faster the pole voltage ...

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Problems solved by technology

[0004] However, due to the small doping concentration in the channel, a larger energy band bending than the gate-source overlap region will occur under a certain gate bias voltage, so there is a small gate voltage between the source region and the channel The energy bands overlap, resulting in band-to-band tunneling (called point tunneling)

Although the point tunneling current is small, the turn-on voltage of point tunneling is smaller, which will cause the tunneling current of the TFET in the subthreshold region to change slowly with the gate voltage, resulting in an increase in the subthreshold swing

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