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Method for growing GaN film on amorphous state SiO2 substrate

An amorphous and substrate technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high substrate cost and complicated process, and achieve the effect of improving crystallinity

Active Publication Date: 2018-08-21
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the problem that the present invention cannot directly convert amorphous SiO 2 As a substrate to grow GaN thin film, the substrate cost is high and the process is complicated. It provides a method of growing GaN film on amorphous SiO 2 Method for growing GaN thin film on substrate

Method used

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  • Method for growing GaN film on amorphous state SiO2 substrate
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Embodiment 1

[0013] Embodiment 1: as figure 1 As shown, an amorphous SiO 2 Method for growing GaN thin films on substrates using amorphous SiO 2 The material is used as the substrate, and the metal organic compound chemical vapor deposition method (MOCVD) is used to grow the GaN film, and the AlGaN nucleation layer and the GaN epitaxial layer are grown sequentially.

[0014] Specific steps are as follows:

[0015] (1) Substrate surface cleaning and nitriding treatment: amorphous SiO 2 The substrate is placed in a metal-organic vapor deposition MOCVD reaction chamber. Under a hydrogen atmosphere, the substrate is cleaned at 1250°C for 10 minutes, then cooled to 700°C, and treated with ammonia gas with a flow rate of 1000sccm for 10 minutes, and the pressure of the reaction chamber is controlled. 160mbar;

[0016] (2) Preparation of AlGaN nucleation layer: After nitriding treatment, at 750°C, in an environment with an ammonia gas flow rate of 1250 sccm, a V / III ratio of 720, and a gall...

Embodiment 2

[0021] Embodiment 2: a kind of amorphous SiO 2 Method for growing GaN thin films on substrates using amorphous SiO 2 The material is used as the substrate, and the metal organic compound chemical vapor deposition method (MOCVD) is used to grow the GaN film, and the AlGaN nucleation layer and the GaN epitaxial layer are grown sequentially.

[0022] Specific steps are as follows:

[0023] (1) Substrate surface cleaning and nitriding treatment: amorphous SiO 2 The substrate is placed in a metal-organic vapor deposition MOCVD reaction chamber. Under a hydrogen atmosphere, the substrate is cleaned at 1300°C for 18 minutes, then cooled to 750°C, and treated with ammonia gas with a flow rate of 1200sccm for 15 minutes, and the pressure of the reaction chamber is controlled. 160mbar;

[0024] (2) Preparation of AlGaN nucleation layer: After nitriding treatment, at 700°C, in an environment with an ammonia gas flow rate of 1700 sccm, a V / III ratio of 820, and a gallium source and f...

Embodiment 3

[0029] Embodiment 3: a kind of amorphous SiO 2 Method for growing GaN thin films on substrates using amorphous SiO 2 The material is used as the substrate, and the metal organic compound chemical vapor deposition method (MOCVD) is used to grow the GaN film, and the AlGaN nucleation layer and the GaN epitaxial layer are grown sequentially.

[0030] Specific steps are as follows:

[0031] (1) Substrate surface cleaning and nitriding treatment: amorphous SiO 2 The substrate is placed in a metal-organic vapor deposition MOCVD reaction chamber. Under a hydrogen atmosphere, the substrate is cleaned at 1200°C for 20 minutes, then cooled to 650°C, and treated with ammonia gas with a flow rate of 1100 sccm for 5 minutes, and the pressure of the reaction chamber is controlled. 200mbar;

[0032] (2) Preparation of AlGaN nucleation layer: After nitriding treatment, at 800°C, in an environment with an ammonia gas flow rate of 1200 sccm, a V / III ratio of 780, and a gallium source and flo...

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Abstract

The invention belongs to the technical field of GaN film preparation methods, and provides a method for growing a GaN film on an amorphous state SiO2 substrate for solving the problems that at present, amorphous state SiO2 cannot be directly adopted as the substrate for growing the GaN film, the substrate cost is high, and the technology is complex. The amorphous state SiO2 material is adopted asthe substrate, a metallo-organic compound chemical vapor deposition method, namely an MOCVD method is adopted for growing the GaN film, and a AlGaN nucleation layer and a GaN epitaxial layer grow sequentially. The SiO2 is directly adopted as the substrate, and the MOCVD method is adopted for growing the GaN film. AlGaN is adopted as the nucleation layer, during annealing, the low NH3 flow can accelerate unstable crystal face decomposition in the AlGaN nucleation layer, and follow-up growth of the GaN film along the c face is promoted. Due to the short annealing time, the re-evaporation degreecan be lowered, and therefore the follow-up growth GaN film quality is improved.

Description

technical field [0001] The invention belongs to the technical field of GaN thin film preparation methods, in particular to a 2 The method of growing GaN film on the substrate adopts metal organic compound chemical vapor deposition method, namely MOCVD method. Background technique [0002] The research and application of III-nitride semiconductor materials is a hot topic in the semiconductor industry. As a representative group-III nitride semiconductor material, GaN has been greatly developed in the fields of light-emitting diodes (LEDs) and high-power electronic devices due to its excellent electronic and optical properties. Compared with substrates such as sapphire, 6H-SiC, and Si, SiO 2 has the advantage of lower price, so in SiO 2 Realizing the growth of high-quality GaN thin film on the substrate is the goal that everyone has been pursuing. JTTorvik et al. used the ECR-MBE method to pattern SiO on SiC substrates 2 GaN growth is achieved for the mask (see Optical p...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/0254H01L21/0262
Inventor 李天保刘晨阳张哲于斌贾伟余春燕董海亮贾志刚许并社
Owner TAIYUAN UNIV OF TECH
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