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Method and apparatus for deposition cleaning in a pumping line

A pipeline and pumping technology, applied in the field of ion source, can solve the problems of reducing the service life of the vacuum pump and clogging

Active Publication Date: 2018-08-21
MKS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similar to throttling valves, accumulation of unwanted material in vacuum pumping lines can create a range of problems including clogging of pumping lines and other downstream equipment, interference with proper operation of associated vacuum pumps, reduced vacuum pump life, and contamination Process steps in the process chamber

Method used

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  • Method and apparatus for deposition cleaning in a pumping line
  • Method and apparatus for deposition cleaning in a pumping line
  • Method and apparatus for deposition cleaning in a pumping line

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Embodiment Construction

[0064]In deposition processing, there are generally two types of such chemical reactions that may occur along the foreline (also known as the vacuum pumping line) or within the foreline itself (e.g., a throttle valve) formation of unwanted material deposits on the One type of chemical reaction is a rate limiting reaction in which not most or all of the reactants (eg, input gases) in the reaction chamber are consumed at the wafer plane. Rather, reactions intended to occur on the wafer may also occur further downstream and / or outside the chamber. For example, gas supplied to the reaction chamber may continue to react while being pumped out of the chamber. Wall interactions can increase the likelihood of this rate-limiting reaction, where two gaseous reactants are pumped out of the reaction chamber and adhere to the same surface where they subsequently react to produce by-products. In some cases, wall interactions are more likely to occur on the surface of the control element o...

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Abstract

A vacuum pumping line plasma source is provided. The plasma source includes a body defining a generally cylindrical interior volume extending along a central longitudinal axis. The body has an input port for coupling to an input pumping line, an output port for coupling to an output pumping line, and an interior surface disposed about the generally cylindrical interior volume. The plasma source also includes a supply electrode disposed adjacent to a return electrode, and a barrier dielectric member, a least a portion of which is positioned between the supply electrode and the return electrode.The plasma source further includes a dielectric barrier discharge structure formed from the supply electrode, the return electrode, and the barrier dielectric member. The dielectric barrier dischargestructure is adapted to generate a plasma in the generally cylindrical interior volume.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of US Application Serial No. 14 / 994,668 filed January 13, 2016, which is owned by the assignee of this application and is hereby incorporated by reference in its entirety. technical field [0003] The present invention generally relates to a plasma source configured to generate a localized plasma to clean at least a portion of a pumping line in a semiconductor processing environment. Background technique [0004] Deposition processes, including chemical vapor deposition (CVD) processes, are commonly used in the manufacture of semiconductor devices. For example, in a typical CVD process, reactant gases are introduced into a reaction chamber and directed to a heated substrate to initiate a controlled chemical reaction that results in the deposition of a thin film on the surface of the substrate. During the deposition process, the chamber pressure is precisely controlled by one ...

Claims

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Application Information

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IPC IPC(8): H01J37/32
CPCH01J37/32862H01J37/32348H01J37/32844Y02C20/30H05H1/2418C23C16/4412F16K51/02C23C16/4405F16K1/22F16K3/06F16K3/10F16K41/10Y02P70/50C23C16/513F16K15/026
Inventor G.希尔S.贝内迪特K.温策尔
Owner MKS INSTR INC