Process method for deep trenches and through-silicon vias of image sensors
An image sensor and deep trench technology, which is applied in the process field of deep trenches and through silicon vias, can solve the problems of complex process steps and increase the manufacturing cost of back-illuminated CIS products, so as to reduce negative effects, reduce equipment configuration, The effect of reducing process costs
Active Publication Date: 2020-10-02
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF9 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0006] It can be seen that the process technology of back-illuminated CIS in the prior art separately processes deep trenches and through-silicon vias, which leads to complicated process steps, and too many process steps will increase the manufacturing cost of back-illuminated CIS products.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0034] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms, and should not be construed as being limited to the examples set forth herein; on the contrary, the provision of these embodiments makes the present disclosure more comprehensive and complete, and fully conveys the concept of the example embodiments To those skilled in the art. The described features, structures or characteristics may be combined in one or more embodiments in any suitable way.
[0035] In addition, the drawings are only schematic illustrations of the present disclosure, and are not necessarily drawn to scale. The same reference numerals in the figures denote the same or similar parts, and thus their repeated description will be omitted. Some of the block diagrams shown in the drawings are functional entities and do not necessarily correspond to physically or logically independent entities....
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a method for manufacturing deep grooves and through-silicon holes of an image sensor. The method for manufacturing deep grooves and through-silicon holes includes: providing a pixel silicon wafer; performing a silicon substrate on the second side of the pixel silicon wafer Thinning process; forming a deep trench on the second side of the pixel silicon wafer; filling the deep trench with organic matter; coating photoresist on the second side of the pixel silicon wafer; Etching the second side of the silicon wafer to form through-silicon holes; depositing a dielectric protective layer on the surface of deep trenches and through-silicon holes; filling organic matter in deep trenches; Resist; Etch the second side of the pixel silicon wafer according to the contact hole pattern to form a contact hole; deposit a barrier layer on the surface of the deep trench and the through-silicon hole, and fill the first metal in the deep trench, and at the same time A seed layer is formed on the surface of the through-silicon hole; the first metal is filled in the through-silicon hole. The manufacturing method provided by the invention reduces the manufacturing process of the image sensor.
Description
Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a process method for deep trenches and through silicon vias of image sensors Background technique [0002] With the popularization of smart phones and tablet computers, the demand for CMOS image sensor (CIS) products is increasing day by day. The configuration of smart phone cameras is at least 3 million pixels or more, and some high-end smart phones are even equipped with cameras with more than 10 million pixels. These high-end applications have higher requirements on the performance of CIS products, including pixels, resolution, power consumption, and physical size. Therefore, many CIS product suppliers are focusing on the development of back-illuminated image sensor technology (BSI CIS) to further improve the sensitivity of CIS products and reduce the interference between pixel signals, and support the imaging needs of high-end smart phones. Back-illuminated image s...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L27/146
CPCH01L27/14636H01L27/14687H01L21/76898H01L27/1463H01L27/14689
Inventor 林宏
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT