Temperature controlled ion source

An ion source and ion beam technology, applied in the field of ion sources, can solve problems such as ion source operation or adverse effects on lifespan

Active Publication Date: 2018-08-31
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Additionally, these temperatures can adversely affect ion source operation or lifetime

Method used

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  • Temperature controlled ion source
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Embodiment Construction

[0020] Embodiments are described herein in conjunction with an indirectly heated cathode (IHC) ion source. However, other ion sources such as Bernas and Freeman ion sources or RF ion sources may be used. Therefore, the present invention is not limited to the specific examples set forth below.

[0021] figure 1 A representative apparatus 100 that may be used to generate an ion beam is shown. The apparatus 100 includes an ion source 10 and a heat sink 80 . Ion source 10 may be an indirectly heated cathode (IHC) ion source, although other ion sources may also be used. Ion source 10 has a plurality of chamber walls 11 that define an ion source chamber 12 . The chamber wall 11 may be constructed from an electrically conductive material. One of the chamber walls has an extraction aperture 15 through which ions can be extracted from the ion source chamber 12 . Outside the ion source chamber 12 and near the extraction aperture 15 there are one or more electrodes 20 . In certain...

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PUM

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Abstract

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of theheat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Description

[0001] This application claims priority to US Patent Application Serial No. 14 / 977,720, filed December 22, 2015, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to an ion source, and more particularly to an ion source in which the temperature can be controlled and adjusted by a heat sink. Background technique [0003] Ion implantation is a standard technique for introducing conductivity-altering impurities into workpieces. The desired impurity material is ionized in the ion source, the ions are accelerated to form an ion beam having a prescribed energy, and the ion beam is directed toward the surface of the workpiece. The energetic ions in the beam penetrate most of the workpiece material and become embedded in the crystalline lattice of the workpiece material to form a region of desired conductivity. [0004] To generate an ion beam, an ion source typically consumes a large amount of power. While th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/08
CPCH01J37/08H01J37/3171H01J2237/002H01J37/3002
Inventor 史考特·C·后登具本雄布兰特·S·宾斯理查尔·M·怀特肯尼士·L·斯塔克斯艾利克·R·科步
Owner VARIAN SEMICON EQUIP ASSOC INC
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