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Electrically programmable fuse structure and semiconductor device

A fuse structure and device technology, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device components, etc., can solve the problems of device influence and fuse chain burst, reduce the heat dissipation process, reduce the risk of burst, The effect of speeding up the rate of fusing

Active Publication Date: 2019-05-07
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an electric programmable fuse structure to solve the problem that the fuse link often bursts due to excessive temperature during the programming process of the existing electric programmable fuse structure. Problems affecting peripheral devices

Method used

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  • Electrically programmable fuse structure and semiconductor device
  • Electrically programmable fuse structure and semiconductor device
  • Electrically programmable fuse structure and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Figure 2a is a schematic diagram of the electric programmable fuse structure in Embodiment 1 of the present invention, Figure 2b for Figure 2a Shown is a partial enlarged view of the electric programmable fuse structure in Embodiment 1 of the present invention. Such as Figure 2a with Figure 2b As shown, the e-fuse structure includes a cathode 100 and a fuse link 200 , one end of the cathode 100 and the fuse link 200 are connected to each other and have a connection point P. And, the electric programmable fuse structure further includes an anode 300 , and the anode 300 is connected to the other end of the fuse link 200 . Wherein, the material of the cathode 100 includes metal, for example. The fuse link 200 can be a single-layer structure or a laminated structure; and, the material of the fuse link 200 can also include metal, that is, the fuse link 200 can be a single-layer metal layer, or it can be for laminated metal layers. The forming process of the fuse ...

Embodiment 2

[0083] The difference from Embodiment 1 is that the shape of the cathode in this embodiment presents a comb-like structure or a tree-like structure. And, the cathode can also be a symmetrical structure with the length direction of the fuse link as the axis direction.

[0084] Figure 3a It is a schematic diagram of the electric programmable fuse structure in Embodiment 2 of the present invention, Figure 3b for Figure 3a The partial enlarged view of the electric programmable fuse structure in the second embodiment of the present invention is shown. to combine Figure 3a with Figure 3b As shown, in this embodiment, the plurality of conductive branches 110' of the cathode 100' can also be divided into N branch groups, and the conductive branches 110' in the first branch group 110a' are connected to the connection point P, and the first The conductive branches 110' in the N branch groups are connected to the conductive branches 110' in the N-1th branch group. And, the num...

Embodiment 3

[0090] Based on the above-mentioned electrically programmable fuse structure, the present invention also provides a semiconductor device, which includes the electrically programmable fuse structure. For example, the semiconductor device is a memory, and the memory may further be a dynamic random access memory.

[0091] Wherein, the memory further includes a storage unit. Optionally, the electrically programmable fuse structure may be used to constitute a part of the storage unit of the memory, so as to realize data storage. Specifically, before programming the electrically programmable fuse structure, the initial resistance of the fuse structure is very small. And, when programming the electrically programmable fuse structure, a large current flows through the fuse link to blow the fuse link, thereby multiplying the resistance value of the electrically programmable fuse structure, and the blown fuse link will be permanently remains open, while the unblown fuse link remains o...

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Abstract

The invention provides an electric programmable fuse structure and a semiconductor device. Since the cathode in the electric programmable fuse structure has multiple conductive branches that can realize the shunting of electron flow, so that the cathode can allow a larger electron flow, so the electron flow at the connection point with the fuse link can be increased accordingly Gradient, which is beneficial to improve the electrical mobility of the fuse link at the connection point. Moreover, multiple conductive branches can also speed up the heat dissipation efficiency of the cathode to reduce the temperature of the cathode, thereby increasing the temperature gradient at the connection point between the cathode and the fuse link, and further improving the melting efficiency under the addition of a larger temperature gradient. The electrical mobility of the silk link at the connection point enables the fuse link to be blown under the action of electromigration and avoids the problem of the fuse link bursting.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electric programmable fuse structure and a semiconductor device. Background technique [0002] In the field of semiconductors, the traditional fuse usually adopts laser fuse technology, that is, the high temperature of the laser is used to vaporize the fuse, so that the fuse is blown. Specifically, the traditional laser fuse should be partially exposed, so as to provide a circulation channel for the vaporization of the fuse in the process of using the laser to blow the fuse. However, the exposed fuse will also lead to the risk of contamination, making the performance of the laser fuse unstable; and the laser fuse needs to use laser equipment to realize the fusing process of the fuse, which further limits the laser fuse. The size cannot be too small; in addition, as the size of semiconductors continues to shrink, there is a corresponding problem of difficult operation w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/525H01L27/115H10B69/00
CPCH01L23/5258H10B69/00H01L23/5256G11C17/16H10B20/25
Inventor 陈面国
Owner CHANGXIN MEMORY TECH INC
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