Equivalent circuit of a fractional order memristor

A technology of equivalent circuit and order memory, applied in the field of effective circuit, can solve problems such as limiting the scope of use

Active Publication Date: 2019-08-20
深圳市前海源泰盛电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2015, Wang Guangyi, Jin Peipei and others invented "an analog circuit for realizing the characteristics of memristor" (CN205232190U). This circuit is an equivalent analog circuit of a magnetron memristor without parasitic resistance, but its One end can only be grounded, which limits its range of use in circuits
These few fractional-order memristor models only stay in the stage of theoretical analysis and simulation verification, and no fractional-order memristor equivalent circuit composed of conventional electronic components has yet appeared.

Method used

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  • Equivalent circuit of a fractional order memristor
  • Equivalent circuit of a fractional order memristor
  • Equivalent circuit of a fractional order memristor

Examples

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Embodiment 1

[0089] An equivalent circuit of a fractional order memristor. Such as figure 1 Shown: the equivalent circuit of the fractional-order memory sensor is provided with the terminal A of the equivalent circuit of the fractional-order memory sensor, the terminal B of the equivalent circuit of the fractional-order memory sensor, the equivalent circuit of the fractional-order memory sensor The terminal C of the circuit and the terminal GND of the equivalent circuit of the fractional order memristor; Between the terminals GND of the equivalent circuit; the control signal x of the initial value of the state variable of the fractional memristor 0 'Added between the terminal C of the equivalent circuit of the fractional-order memristor and the terminal GND of the equivalent circuit of the fractional-order memristor.

[0090] The terminal A of the equivalent circuit of the fractional order memristor is connected with the terminal J1 of the integral module (1), the terminal J2 of the inte...

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PUM

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Abstract

The invention relates to an equivalent circuit of a fractional order memory inductor. According to the technical scheme, an input current i(t) of the equivalent circuit of the fractional order memoryinductor is processed through an integral module (1), a first resistor (2) and a current transmitter (3) to obtain an output voltage V01; and through phase shift of a voltage-controlled phase shifter(9), input signal frequency detection of a frequency / voltage converter (21) and action of a third adder (23), an input voltage VS3 of the current transmitter (3) is obtained. An introduced control signal alpha' of an order of the fractional order memory inductor is used for changing the order of the fractional order memory inductor, and an introduced control signal x0' of an initial value of a state variable of the fractional order memory inductor is used for changing the initial value of the state variable of the fractional order memory inductor. The electrical characteristics of the fractional order memory inductor can be accurately simulated and the precision is high; and in addition, the order of the fractional order memory inductor and the initial value of the state variable of the fractional order memory inductor are convenient to adjust and easy to control.

Description

technical field [0001] The invention belongs to the technical field of equivalent circuits of memristors. In particular, it relates to an equivalent circuit of a fractional order memristor. Background technique [0002] In 1971, based on the basic theory of circuits, Professor Cai Shaotang conjectured that there is also a basic circuit element that characterizes the relationship between charge and magnetic flux. This element was named memristor by him. With the emergence of memristors, in 2009, Ventra et al. proposed the concept of two new circuit components: memristors and memcapacitors (Ventra M D, Pershin Y V, Chua L O. Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors [J]. Proceedings of the IEEE, 2009, 97(10): 1715-1716), due to their unique memory function, in recent years, they have received widespread attention in the field of electronic circuits. [0003] At present, memory components are still in the stage of laboratory research, and there...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
CPCG06F30/30
Inventor 甘朝晖王晓赞蒋旻
Owner 深圳市前海源泰盛电子科技有限公司
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