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Rework cleaning method and rework method of black silicon wafers after printing

A silicon wafer and black silicon technology, which is applied in the field of solar silicon wafer processing, can solve the problems of short circuit of black silicon cells, unsuitable for rework cleaning of black silicon wafers, etc.

Inactive Publication Date: 2018-09-07
徐州鑫宇光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned rework cleaning method for defective silicon wafers is not suitable for the rework cleaning of defective black silicon wafers.
Usually, after conventional cleaning, a small amount of printing paste will remain on the surface of the black silicon wafer, and the black silicon cell after printing and sintering will be short-circuited, and there is no rework cleaning method suitable for the printed black silicon wafer. to report

Method used

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  • Rework cleaning method and rework method of black silicon wafers after printing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Preliminary cleaning: Take 50 pieces of black silicon wafers to be reworked and place them in deionized water for 30 minutes of ultrasonic cleaning, the ultrasonic power is 300W, and then use a dust-free cloth dipped in absolute ethanol to evenly wipe the front and back sides and sides of the black silicon wafers .

[0056] Deep cleaning: place the wiped black silicon silicon wafer in ammonia water with a concentration of 2.5g / mL and clean it with nitrogen bubbles for 30 minutes, and then place it in a deionized bath and clean it with nitrogen bubbles for 10 minutes. Among them, the nitrogen bubbling cleaning process is as follows: the nitrogen flow rate is 50 LPM, and the nitrogen pressure is 3 bar.

[0057] Drying: put the black silicon silicon wafer after deep cleaning into the drying machine for drying, the drying speed of the drying process is 560rpm, and the drying time is 5min.

[0058] Secondary printing; screen printing on dried black silicon wafers.

[0059]...

Embodiment 2

[0061] Preliminary cleaning: Take 50 pieces of black silicon wafers to be reworked and place them in deionized water for 30 minutes of ultrasonic cleaning, the ultrasonic power is 300W, and then use a dust-free cloth dipped in absolute ethanol to evenly wipe the front and back sides and sides of the black silicon wafers .

[0062] Deep cleaning: Place the wiped black silicon wafer in ammonia water with a concentration of 3g / mL and clean it with nitrogen bubbles for 40 minutes, and then place it in a deionized bath and clean it with nitrogen bubbles for 10 minutes. Among them, the nitrogen bubbling cleaning process is as follows: the nitrogen flow rate is 50 LPM, and the nitrogen pressure is 3 bar.

[0063] Drying: put the black silicon silicon wafer after deep cleaning into the drying machine for drying, the drying speed of the drying process is 560rpm, and the drying time is 5min.

[0064] Secondary printing; screen printing on dried black silicon wafers.

[0065] Then, the...

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Abstract

The invention relates to a rework cleaning method and rework method of black silicon wafers after printing. The rework cleaning method of black silicon wafers after printing comprises the following steps: taking the black silicon wafers to be reworked into deionized water for ultrasonic cleaning, then wiping the surfaces of the black silicon wafers with an organic solvent, putting the black silicon wafers after being wiped with the organic solvent into ammonia water for bubbling cleaning for 20 to 40 min, and then putting the wiped black silicon wafers into deionized water for bubbling cleaning. The rework cleaning method is applicable for rework cleaning of the black silicon wafers, black silicon battery pieces finally prepared and obtained through the rework cleaning method can reach theacceptable quality level of the black silicon battery pieces, and the purpose of rework cleaning is reached. Moreover, the rework cleaning method is simple, the step of wiping with terpilenol is omitted, and the rework cleaning time of the black silicon wafers is shortened.

Description

technical field [0001] The invention relates to the field of solar silicon chip processing, in particular to a rework cleaning method and a rework method for printed black silicon silicon chips. Background technique [0002] In the existing black silicon wafer printing process, due to mechanical and human factors, some printing abnormalities often occur, resulting in defective printing. The final finished cells are directly scrapped and cannot be used. Due to the high cost of black silicon wafers, if there are a large number of scrapped products, the cost will increase. Therefore, in order to reduce production costs, it is usually necessary to rework these defective black silicon wafers produced by printing. [0003] At present, the traditional cleaning method for rework of defective silicon wafers is: wiping the surface of black silicon wafers with terpineol - wiping the surface of black silicon wafers with alcohol - cleaning with hydrochloric acid. However, the rework cl...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02057H01L31/18Y02P70/50
Inventor 吕强焦如意
Owner 徐州鑫宇光伏科技有限公司