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Multiple-stage RF amplifier devices

An amplifier and inter-stage technology, applied in amplifiers, components of amplifiers, radio frequency amplifiers, etc., can solve problems such as linearization limitations, electrical memory effect intermodulation distortion, etc.

Pending Publication Date: 2018-09-07
NXP USA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when wideband OFDM signals in concurrent mode are transmitted through high-power PAs, severe electrical memory effects and inter-modulation distortion (IMD) may be caused
These distortions present limitations to the linearization of digital predistortion (DPD)

Method used

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Examples

Experimental program
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Embodiment Construction

[0075] A Doherty power amplifier (DPA) is one of the most popular solutions for amplifying high peak-to-average power ratio (PAPR) signals. Several bandwidth extension techniques have been introduced for DPA. However, such DPAs have exhibited narrow bandwidth digital predistortion (DPD) performance due to the limitation of instantaneous bandwidth (IBW) characteristics. To extend the IBW, some designers have explored the nonlinearity of the PA and reduced memory effects. Baseband impedance can be a major factor in minimizing memory effects through careful design of matching and biasing circuits.

[0076] Embodiments of the inventive subject matter include highly linear, fully integrated, high power (eg, 40 watts (W)), multi-stage PAs and DPAs (eg, for 4 / 5G communication systems). To extend the IBW, PA and DPA embodiments include linearity enhancement circuitry to minimize low frequency second order terms. Using DPD techniques, DPA embodiments have been shown to achieve an ad...

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Abstract

A multiple-stage RF amplifier and a packaged amplifier device include driver and final-stage transistors, each having a control terminal, a first current-carrying terminal, and a second current-carrying terminal. The control terminal of the final-stage transistor is electrically coupled to the first current-carrying terminal of the driver transistor. The amplifier further includes an inter-stage circuit coupled between the first current carrying terminal of the driver transistor and a voltage reference node. The inter-stage circuit includes a first inductance, a first capacitor, and a second capacitor. The first inductance and the first capacitor are coupled in series between the first current carrying terminal and the voltage reference node, with a first intermediate node between the first inductance and the first capacitor. The second capacitor has a first terminal electrically coupled to the first intermediate node and a second terminal electrically coupled to the voltage referencenode.

Description

technical field [0001] Embodiments of the subject matter described herein relate generally to packaging semiconductor devices, and more specifically, to packaging radio frequency (RF) amplifier devices. Background technique [0002] Emerging wireless networks have evolved to support and provide spectrally efficient modulation techniques, such as quadrature modulation (QAM) combined with orthogonal frequency division multiplexing (OFDM). These modulated communication signals include high peak-to-average power ratio (PAPR) signals. In addition, next-generation wireless standards such as long-term evolution advanced (LTE-A) support wide spectrum allocation and carrier aggregation (carrier aggregation; CA) technology to further expand signal bandwidth. Therefore, operating at higher data rates using broadband signals in high power amplifiers (power amplifiers (PAs)) would require highly linear and efficient signal transmission. [0003] For successful amplification of intra-ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F1/32H03F1/56H03F3/195
CPCH03F1/0288H03F1/32H03F1/565H03F3/195H03F2200/451H01L23/66H03F3/24H01L2223/6655H03F2200/222H03F2200/318H03F2200/387H03F2200/42H03F2200/48H03F2200/54H01L2223/6672H01L2223/665H01L2224/48247H01L2224/49111H01L2223/6611H03F1/56H03F3/213H03F2200/411
Inventor 闵胜基玛格丽特·A·斯马诺夫斯基亨利·安德烈·克里斯坦基
Owner NXP USA INC