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Hall device applied to three-dimensional Hall sensor and offset cancellation method

A Hall sensor, Hall device technology, applied in the size/direction of the magnetic field, instruments, three-component magnetometers, etc., can solve the problems of high packaging requirements and high cost, achieve improved performance, offset voltage elimination, application assistance Effect

Pending Publication Date: 2018-09-14
FUZHOU UNIV
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  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

This method can be realized only with a one-dimensional horizontal Hall device, but the requirements for packaging are relatively high, and it is not a monolithically integrated three-dimensional Hall sensor, and the cost is relatively high

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  • Hall device applied to three-dimensional Hall sensor and offset cancellation method
  • Hall device applied to three-dimensional Hall sensor and offset cancellation method
  • Hall device applied to three-dimensional Hall sensor and offset cancellation method

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Embodiment Construction

[0029] The technical solution of the present invention will be specifically described below in conjunction with the accompanying drawings.

[0030] The invention provides a Hall device applied to a three-dimensional Hall sensor, which can be integrated on a chip to realize a monolithic integrated three-dimensional Hall sensor, and the Hall device includes a horizontal Hall device and a vertical Hall device .

[0031] The horizontal Hall device includes a P-type substrate layer, an N well layer, and a P+ injection region layer arranged sequentially from bottom to top, and the P+ injection region layer does not completely cover the N well layer to expose the four corners of the N well layer. The N+ injection region layer at the four corners of the N well layer and the metal layer covering the P+ injection region layer and the N+ injection region layer, the N well layer is used as the active region of the horizontal Hall device, and the N+ injection region layer is used as the ho...

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Abstract

The present invention relates to a Hall device applied to a three-dimensional Hall sensor and an offset cancellation method. The Hall device can be integrated on a chip to realize a single-chip integrated three-dimensional Hall sensor. The Hall device includes a horizontal Hall device and a vertical Hall device. The invention also proposes a quadrature coupled rotating current technique. By improving the structures of the horizontal Hall device and the vertical Hall device, the performance is improved, thus the horizontal Hall device and the vertical Hall device can be applied to the single-chip integrated three-dimensional Hall sensor, according to the method of the invention, the elimination of offset voltage can be achieved, the three-dimensional detection of a magnetic field can be realized by the single chip, and the method has a great help to the application of the magnetic field detection.

Description

technical field [0001] The invention relates to a Hall device applied to a three-dimensional Hall sensor and an offset elimination method thereof. Background technique [0002] In recent years, Hall sensors based on CMOS technology have many advantages such as low power consumption, low cost, high integration, high reliability and strong anti-interference ability, and are widely used in automobile manufacturing, medical electronics, instrumentation and consumer electronics and other fields. However, as people's requirements for magnetic field detection are getting higher and higher, Hall sensors are required to be able to detect magnetic fields in all directions and realize the measurement of three-dimensional magnetic fields. Hall sensors are mainly divided into horizontal type and vertical type. The horizontal Hall sensor is mainly used to detect the magnetic field in the Z-axis direction. It was developed earlier and has excellent performance. The vertical Hall sensor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/10G01R33/07G01R33/02G01R33/00
CPCG01R33/0029G01R33/0206G01R33/072G01R33/10
Inventor 魏榕山郭仕忠段秋婷
Owner FUZHOU UNIV
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