Method for preparing high resistivity epitaxial layer for photoelectric detector by using heavily-doped silicon substrate
A photodetector and epitaxial layer technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of P-type silicon epitaxial layer resistivity defect control, etc., to suppress the influence of impurity self-diffusion and meet the use requirements , the effect of good crystallization quality
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Embodiment 1
[0026] The first step is to load the silicon substrate on the epitaxial base in the epitaxial reaction chamber, and then use nitrogen and hydrogen to purge the doping pipeline and reaction chamber of the epitaxial furnace in sequence. The flow rate of nitrogen is set to 100 L / min, and the flow rate of hydrogen is The flow rate was set at 100 L / min, and the purge time of the doping pipeline and reaction chamber was set at 10 min;
[0027] The second step is to heat the epitaxial susceptor directly from room temperature to 1160°C at a heating rate of 10°C / min, inject hydrogen chloride gas, and polish the surface of the silicon substrate, set the hydrogen chloride flow rate to 3 L / min, and polish The time is set to 1min;
[0028] The third step is to bake the silicon substrate at a constant temperature for 3 minutes to volatilize the impurities on the surface of the silicon substrate and form an impurity depletion region on the surface;
[0029] Step 4: Purging the reaction cham...
Embodiment 2
[0036] The first step is to load the silicon substrate on the epitaxial base in the epitaxial reaction chamber, and then use nitrogen and hydrogen to purge the doping pipeline and reaction chamber of the epitaxial furnace in sequence. The flow rate of nitrogen is set to 100 L / min, and the flow rate of hydrogen is The flow rate was set at 100 L / min, and the purge time of the doping pipeline and reaction chamber was set at 10 min;
[0037] The second step is to heat the epitaxial base from room temperature to 1160°C at a heating rate of 15°C / min, inject hydrogen chloride gas, and polish the surface of the silicon substrate. The flow rate of hydrogen chloride is set to 3 L / min, and the polishing time is set to 1min;
[0038] The third step is to bake the silicon substrate at a constant temperature for 3 minutes to volatilize the impurities on the surface of the silicon substrate and form an impurity depletion region on the surface;
[0039] Step 4: Purging the reaction chamber f...
Embodiment 3
[0047] The first step is to load the silicon substrate on the epitaxial base in the epitaxial reaction chamber, and then use nitrogen and hydrogen to purge the doping pipeline and reaction chamber of the epitaxial furnace in sequence. The flow rate of nitrogen is set to 100 L / min, and the flow rate of hydrogen is The flow rate was set at 100 L / min, and the purge time of the doping pipeline and reaction chamber was set at 10 min;
[0048] The second step is to heat the epitaxial susceptor from room temperature to 1160°C with a heating rate of 15°C / min, and keep the temperature at 900°C, 950°C and 1000°C for 2 minutes, and then introduce hydrogen chloride gas to the surface of the silicon substrate. For polishing, the hydrogen chloride flow rate is set to 3 L / min, and the polishing time is set to 1 min;
[0049] The third step is to bake the silicon substrate at a constant temperature for 3 minutes to volatilize the impurities on the surface of the silicon substrate and form an ...
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