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A chemical vapor deposition furnace

A chemical vapor deposition, deposition chamber technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of difficult to effectively control the intake and exhaust, uneven film thickness, uneven heating, etc. To achieve the effect of being suitable for popularization and use, the thickness of the film is consistent, and the distribution of gas is uniform.

Active Publication Date: 2021-03-26
滁州华海中谊工业炉有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The deposition furnace in the prior art has the following problems in use: 1. Usually, high-temperature heating is used to promote coating, (certainly also plasma and laser-assisted technologies can be used to significantly promote chemical reactions, so that deposition can be performed at a lower temperature. temperature, but the cost is high, and the high-temperature heating method is the most efficient compared to the existing methods), and the heating is uneven during heating, resulting in uneven thickness of the film formed when the film is coated; 2. It is difficult to effectively control the exhaust, and it is also easy to cause uneven film thickness; 3. Due to the effective volume of the deposition furnace, it is very important to effectively distribute the deposition components in the deposition furnace with a reasonable volume capacity

Method used

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  • A chemical vapor deposition furnace
  • A chemical vapor deposition furnace
  • A chemical vapor deposition furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Such as figure 1 , figure 2 , image 3 , Figure 4 As shown, a chemical vapor deposition furnace includes a furnace body 100, one side of the furnace body is provided with a furnace door 200, the other side of the furnace body is provided with a gas outlet hood 300, and the gas outlet hood is connected to the gas outlet pipe 1; one end of the furnace door is hinged to the furnace body, the furnace body is provided with an intake pipe 2, an intake baffle 3, a deflector assembly 4, and a deposition chamber 5 from left to right; the intake baffle is connected to the chamber wall of the furnace body, and the intake baffle is connected to the furnace body The direction of the horizontal central axis is vertical, the center of the air intake baffle is provided with a through hole 6, the air intake pipe passes through and is fixedly connected to the edge of the through hole, and the deflector assembly includes a symmetrically arranged upper deflector assembly 41, a lower T...

Embodiment 2

[0035] In this embodiment, a through hole may be provided at the lower part of the left chamber plate, and a through hole may be provided at the upper part of the right chamber plate. The positions of the through holes of the left chamber plate and the right chamber plate are arranged in a staggered manner, so that the airflow forms a return airflow in the settling chamber, prolonging the residence time of the airflow in the settling chamber.

[0036] In this embodiment, the middle room plate A and the middle room plate B, wherein the middle room plate A is close to the left room plate, the middle room plate B is close to the right room plate, the upper part of the middle room plate A is provided with a through hole, and the middle room plate B is The lower part is provided with a through hole.

[0037] The rest of the structure is consistent with that of Embodiment 1, and will not be repeated here.

Embodiment 3

[0039] Parameters of Example 1

[0040] Heating method: resistance heating; the heater is resistance heating;

[0041] Deposition chamber: made of graphite or carbon / carbon composite;

[0042] Ultimate vacuum degree of cold empty furnace: ≤30Pa;

[0043] Pressure rise rate: ≤0.08Pa / min;

[0044] Maximum operating temperature: 1500°C.

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Abstract

The invention discloses a chemical vapor deposition furnace. The chemical vapor deposition furnace comprises a furnace body, wherein a furnace door is arranged at one side of the furnace body and an air outlet cover is arranged at the other side of the furnace body; the air outlet cover is connected with an air outlet pipe; the furnace body is internally provided with an air inlet pipe, an air inlet baffle plate, a flow guide plate assembly and a deposition chamber in sequence from left to right; the flow guide plate assembly comprises an upper flow guide plate assembly and a lower flow guideplate assembly, which are symmetrically arranged; the deposition chamber comprises a left chamber plate, a right chamber plate, a transverse grid plate and a side chamber barrel; the transverse grid plate is arranged between the left chamber plate and the right chamber plate; the transverse grid plate is vertical with the left chamber plate; the transverse grid plate is used for separating the left chamber plate and the right chamber plate into upper and lower parts; a through hole is formed in the upper part of the left chamber plate and a through hole is formed in the lower part of the rightchamber plate; a through hole is formed in the lower part of the left chamber plate and a through hole is formed in the upper part of the right chamber plate; a heater is arranged at the outer side of the side chamber barrel. According to the chemical vapor deposition furnace disclosed by the invention, a heating assembly and a deposition assembly are reasonably arranged and airflow is uniformlydistributed to form a coating film with the consistent thickness; the coating film thickness of processed products is consistent and the rate of finished products is high.

Description

technical field [0001] The invention relates to an industrial furnace, in particular to a chemical vapor deposition furnace. Background technique [0002] Chemical vapor deposition is a chemical technology, which mainly uses one or several gas-phase compounds or simple substances containing thin film elements to perform chemical reactions on the surface of the substrate to form thin films. Chemical vapor deposition is a new technology for preparing inorganic materials developed in recent decades. Chemical vapor deposition has been widely used to purify substances, develop new crystals, and deposit various single crystal, polycrystalline or glassy inorganic thin film materials. These materials can be oxides, sulfides, nitrides, carbides, or binary or multi-element compounds in groups III-V, II-IV, and IV-VI, and their physical functions can be obtained through gas phase The dopant deposition process is precisely controlled. At present, chemical vapor deposition has become ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/455
CPCC23C16/44C23C16/45502
Inventor 赵成军
Owner 滁州华海中谊工业炉有限公司