Laser assisted electron beam inspection apparatus and method for semiconductor devices
A detection equipment and laser-assisted technology, applied in the electron beam detection device, in the field of detection of defects in CMOS integrated circuits of semiconductor devices, can solve the problems of design difficulties, permanent damage of devices, etc.
Active Publication Date: 2020-12-04
ZHONGKE JINGYUAN ELECTRON LTD
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However, the introduction of a strong electric field brings design difficulties and the risk of permanent damage to the device
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[0034] The technical solutions of the present disclosure will be further explained in detail by means of embodiments in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals and letters designate the same or similar components. The following description of the embodiments of the present disclosure with reference to the accompanying drawings is intended to explain the general inventive concept of the present disclosure, and should not be construed as a limitation of the present disclosure.
[0035] The accompanying drawings are used to illustrate the content of the present disclosure. The dimensions and shapes of the components in the drawings do not reflect the true scale of the components of the laser-assisted electron beam inspection apparatus for semiconductor devices.
[0036] First, the working principle on which the present disclosure is based is explained.
[0037]In the embodiment of the present disclosure, when the ...
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The present disclosure provides a laser-assisted electron beam inspection apparatus and method for semiconductor devices. The electron beam detection apparatus includes an electron beam detection device and a laser irradiation device. The electron beam detection apparatus includes: an electron beam source configured to emit an incident electron beam; a deflector configured to deflect the electron beam projected onto a surface to be tested of the semiconductor device; and an electron detector configured to detect the incident electron beam projected onto the semiconductor device. outgoing electrons from the surface to be measured. The laser irradiation device includes: a laser source configured to generate laser light; and a guide device configured to guide the laser light to be projected onto the semiconductor device, and the projected laser light changes outgoing electrons via the photovoltaic effect on the PN junction of the semiconductor device. With this configuration, the PN junction of the PMOS of the semiconductor device is in a forward biased state and the PN junction of the NMOS is turned on due to the photovoltaic effect of the laser light in the positive charging mode of the electron beam detection device.
Description
technical field [0001] The present disclosure relates to the technical field of semiconductor inspection, and in particular to a laser-assisted electron beam inspection device and method for semiconductor devices, especially an electron beam inspection device and method for detecting defects of semiconductor device CMOS integrated circuits. Background technique [0002] In recent years, in the semiconductor industry, electron beam inspection devices such as scanning electron microscopes are commonly used to detect chip defects, such as open defects (such as CMOS disconnected from contact holes) and short defects in CMOS integrated circuits. [0003] For example, for CMOS type integrated circuits, CMOS disconnection from contact holes is one of the most common defects. A CMOS type integrated circuit includes two basic types of units, namely NMOS and / or PMOS, and in the related art, the following method is usually used to detect the defect that the CMOS is disconnected from th...
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IPC IPC(8): G01R31/28G01R31/26
CPCG01R31/2601G01R31/2853G02B5/122G02B27/30G02B27/0955H01J37/228H01J2237/2817H01L22/12G02B27/0961G02B27/0966H01J37/147H01J37/226H01J37/244H01J37/265H01J2237/24475H01J2237/2448H01J2237/24592H01L27/0924
Inventor 李世光赵焱郭杰宗明成
Owner ZHONGKE JINGYUAN ELECTRON LTD