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Bevel etching device and wafer etching method

A technology for etching devices and wafers, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of not being able to effectively improve wafer edge defects, and achieve uniformity, quality improvement, and uniform etching effects Effect

Inactive Publication Date: 2018-10-16
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0006] The invention provides a bevel etching device and a wafer etching method, which are used to solve the problem that the edge defects of the wafer cannot be effectively improved in the prior art, so as to improve the quality of wafer products

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  • Bevel etching device and wafer etching method
  • Bevel etching device and wafer etching method
  • Bevel etching device and wafer etching method

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Embodiment Construction

[0034] The specific implementation of the bevel etching device and the wafer etching method provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] In the semiconductor manufacturing process, after etching or other wafer processing processes, by-products will be formed at the edge of the wafer, such as polymers containing elements such as carbon, oxygen, nitrogen, and fluorine, as well as by-products due to edge effects Low quality film. These by-products exist at the edge of the wafer, which will affect the subsequent processing of the wafer. In order to ensure the quality of the wafer product, a bevel etching device is generally used to etch the edge of the wafer.

[0036] Due to the particularity of wafer edge etching, only the edge of the wafer needs to be exposed to the plasma atmosphere, and the edge of the wafer is a very small part of the wafer as a whole, such as exposed to the plasma atmosphere The ...

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Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a bevel etching device and a wafer etching method. The bevel etching device is used for etching the marginal area of a wafer. The bevel etching device comprises a first electrode assembly, a second electrode assembly and a rotating assembly, wherein the second electrode assembly and the first electrode assembly are arranged oppositely, and the surface, facing the first electrode assembly, of the second electrode assembly is used for bearing the wafer; the rotating assembly is connected to the second electrode assembly, and is used for controlling the rotation of the second electrode assembly. The whole marginal etching effect of the wafer is uniform, and the uniformity of wafer marginal shape is guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a bevel etching device and a wafer etching method. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and pursue lower production costs per unit storage unit, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or not) flash memory and 3D NAND (3D NAND) flash memory. [0003] Among them, 3D NAND takes its small size and large capacity as the starting point, and uses the highly integrated three-dimensional pattern of the storage unit as the design concept to ...

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Application Information

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IPC IPC(8): H01L21/67H01L21/687H01L21/3065
CPCH01L21/3065H01L21/67069H01L21/68764
Inventor 戴绍龙肖正梨胡军
Owner YANGTZE MEMORY TECH CO LTD
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