Periodically polarized crystal waveguide device having closed-loop waveguide structure and laser
A technology of periodic polarization and waveguide devices, applied in the field of lasers, can solve the problems of inability to output high power, low crystal utilization rate, large overall structure size, etc., to improve nonlinear conversion efficiency, narrow line width, The effect of improving conversion efficiency
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[0042] Wherein, when the coupling waveguide 1007 and the closed-loop waveguide 1006 adopt the ridge waveguide, the periodically polarized crystal is MgO:LiNbO 3 Taking a crystal as an example, the method for preparing a periodically polarized crystal waveguide device 1000 with a closed-loop waveguide structure proposed in the embodiment of the present invention includes:
[0043] Select MgO:LiNbO 3 crystal as substrate 1002;
[0044] After photolithography, the substrate 1002 is periodically polarized using an applied electric field polarization method at room temperature, so as to realize the preparation of a structure in which the polarization directions of the first region 1003 and the second region 1004 are periodically reversed;
[0045] Then deposit a layer of NiCr alloy metal film as a mask layer, transfer the waveguide structure pattern to the substrate 1002 by photolithography, and use wet etching combined with inductively coupled plasma (ICP) etching on the substrat...
Embodiment 1
[0054] In this embodiment, the laser adopts an intracavity OPO structure, such as image 3 shown. The laser includes: a semiconductor laser pump source 2001, a coupling lens group composed of two plano-convex lenses 2002 and 2003, a laser crystal 2004, a convex lens 2005, an intermediate mirror 2006, a MgO:PPLN waveguide 2007 with a closed-loop waveguide structure, and an output mirror 2008 and Mirror 2009. The intermediate mirror 2006, the output mirror 2008 and the mirror 2009 constitute an OPO cavity. A semiconductor laser pump source 2001, a coupling lens group composed of two plano-convex lenses 2002 and 2003, a laser crystal 2004, a convex lens 2005, an intermediate mirror 2006, a MgO:PPLN waveguide 2007 with a closed-loop waveguide structure, and an output mirror 2008 are arranged in sequence along the optical path , the mirror 2009 is located on the reflection optical path of the intermediate mirror 2006 .
[0055] Wherein, the wavelength of the semiconductor laser ...
Embodiment 2
[0064] In this embodiment, the laser adopts a straight cavity intracavity OPO structure, such as Figure 4 shown. The laser includes: a semiconductor laser pump source 3001, a coupling lens group composed of two plano-convex lenses 3002 and 3003, a laser crystal 3004, a convex lens 3005, an intermediate plate 3006, a MgO:PPLN waveguide 3007 with a closed-loop waveguide structure, and an output plate 3008 , the first beam splitter 3010 and the second beam splitter 3009. The middle sheet 3006 and the output sheet 3008 form the OPO cavity. Semiconductor laser pump source 3001, coupling lens group, laser crystal 3004, convex lens 3005, intermediate plate 3006, MgO:PPLN waveguide 3007 with closed-loop waveguide structure, output plate 3008 and first beam splitter 3010 are arranged in sequence along the optical path, and the second beam splitter The sheet 3009 is arranged on the reflected light path of the first spectroscopic sheet 3010 .
[0065] Among them, the wavelength of th...
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