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Organic electroluminescent device

An electroluminescent device and a luminescent technology, which are applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of short luminous life, rapid device efficiency roll-off, etc., and achieve high luminous efficiency and lighten the phenomenon of efficiency roll-off , The effect of prolonging the luminous life

Active Publication Date: 2018-10-23
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the triplet-triplet annihilation (TTA), triplet-polaron Annihilation (TPA) and singlet-triplet annihilation (STA) phenomena are serious, resulting in the defects of fast roll-off of device efficiency and short luminous lifetime

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  • Organic electroluminescent device

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Embodiment 1

[0063] This embodiment provides an organic electroluminescent device, such as figure 2 As shown, it includes a first electrode 1, a second electrode 2 and an organic functional layer 3 between the first electrode 1 and the second electrode. Wherein, the first electrode 1 is an anode, the second electrode 2 is a cathode, and the organic functional layer 3 includes a hole injection layer 31, a hole transport layer 32, a light emitting layer 33, an electron transport layer 34 and Electron injection layer 35 .

[0064] The light-emitting layer 33 is composed of a host material doped with a guest material, the host material is an exciplex with electron transport properties and hole transport properties, and the guest material is a thermally activated delayed fluorescent material, wherein the doping ratio of the thermally activated delayed fluorescent material is (The ratio of the mass of the thermally activated delayed fluorescent material to the total mass of the light-emitting ...

Embodiment 2

[0080] This embodiment provides an organic electroluminescent device. The structure of the organic electroluminescent device is the same as that in embodiment 1. The only difference between the organic electroluminescent device and the organic electroluminescent device provided in embodiment 1 is that an exciplex is formed. The mass ratio of electron donor material (D-20) and electron acceptor material (A-30) is 7:3. An organic electroluminescent device has the following device structure:

[0081] ITO / HATCN(5nm) / NPB(30nm) / TCTA(10nm) / 63wt% (D-20): 27wt% (A-30): 10wt% (T-3) (30nm) / 50wt% DpyPA: 50wt% Liq(30nm) / LiF(0.5nm) / Al(150nm).

[0082] The singlet energy level of the exciplex is 2.86eV, and the singlet energy level of the thermally activated delayed fluorescent material (T-3) is 2.90eV.

Embodiment 3

[0084]This embodiment provides an organic electroluminescent device. The structure of the organic electroluminescent device is the same as that in embodiment 1. The only difference between the organic electroluminescent device and the organic electroluminescent device provided in embodiment 1 is that the main body of the light-emitting layer 33 The material is an electron donor material (D-20) and an electron acceptor material (A-19) to form an exciplex, and the mass ratio of the electron donor material (D-20) to the electron acceptor material (A-19) is 1:1; the doping ratio of the thermally activated delayed fluorescent material (T-3) as the guest material in the light emitting layer 33 is 20wt%. An organic electroluminescent device has the following device structure:

[0085] ITO / HATCN(5nm) / NPB(30nm) / TCTA(10nm) / 40wt%(D-20):40wt%(A-19):20wt%(T-3)(30nm) / 50wt%DpyPA:50wt% Liq(,30nm) / LiF(0.5nm) / Al(150nm).

[0086] The singlet energy level of the exciplex is 2.86eV, and the sing...

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Abstract

The invention discloses an organic electroluminescent device. A light-emitting layer comprises a host material and a guest material. The host material is an exciplex formed by an electron donor material and an electron acceptor material, and the guest material is a thermally activated delayed fluorescent material. The singlet-state energy level of the host material is lower than the singlet-stateenergy level of the guest material. Since the singlet-state energy level of the exciplex as the host material in the light-emitting layer is lower than the singlet-state energy level of the thermallyactivated delayed fluorescent material, the generation of high-energy excitons is prevented, and molecular bond breakage due to high excitation energy is effectively suppressed. The singlet-state energy level of the exciplex is low, which is beneficial to reduce the excitation energy of the excitons in the device, and suppress the triplet state-triplet state annihilation, the triplet state-polaronquenching and the singlet state-triplet annihilation phenomena in the device, thereby reducing the efficiency roll-off of the device and prolonging the service life of the device.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to an organic electroluminescent device. Background technique [0002] Organic light-emitting diodes (OLEDs) have great application prospects in the fields of display and lighting due to their ultra-thin, light weight, low energy consumption, active light emission, wide viewing angle, and fast response. more and more people's attention. [0003] In 1987, Deng Qingyun (C.W.Tang) and Vanslyke of Eastman Kodak Company in the United States reported for the first time a double-layer organic electroluminescent device based on Alq3 and triarylamines, which opened the direction of OLED research. Traditional fluorescent materials are easy to synthesize, cheap, stable, and have a long device life. However, due to electron spin prohibition, at most 25% of singlet excitons can be used to emit light, and the external quantum efficiency of the device is often lower than 5%. Need to...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/624H10K85/654H10K50/12
Inventor 段炼李熠烺宋晓增张东东李国孟
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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