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Method for preparing copper film on insulating material

A technology of insulating materials and copper films, which is applied in the direction of metal material coating process, superimposed layer plating, ion implantation plating, etc., can solve the problems of long time consumption and slow growth of copper film

Inactive Publication Date: 2018-10-26
TRULY OPTO ELECTRONICS
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

A dense copper film can be prepared on the surface of insulating materials by sputtering or evaporation, but the growth rate of the copper film is slow when the copper film is prepared by the above method, so if you want to prepare a thicker copper film, you need to spend a long time time

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  • Method for preparing copper film on insulating material

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Embodiment 1

[0028] First, the insulating substrate (material: PET) is cleaned with plasma water, dried and plasma cleaned in sequence; then the cleaned substrate is put into the coating chamber for magnetron sputtering copper plating, wherein the power of magnetron sputtering is 5.8 ~65kW, the flow rate of argon gas for magnetron sputtering is 200sccm (argon gas is mainly used to hit the target surface to sputter copper atoms), and the vacuum degree of magnetron sputtering is 5×10 -6 (i.e. 5.0E-6) Torr, after magnetron sputtering, the first copper film layer with a thickness of 30-40nm is formed on the substrate; pickling and water washing are carried out in sequence after leaving the cavity, and then placed in an electrolytic tank for electrolysis Copper plating, the electrolyte is copper sulfate aqueous solution, the voltage of electrolytic copper plating is 12V, and the current is 30A. After the electrolytic copper plating is completed, a second copper film layer with a thickness of 10-...

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Abstract

The invention belongs to the field of copper films, and particularly relates to a method for preparing a copper film on an insulating material. The method provided by the invention comprises the following step (a) of performing magnetron sputtering copper plating or vapor copper plating on the surface of an insulating substrate to form a first copper film; and the step (b) performing electrolyticcopper plating on the substrate treated in the step (a) to form a second copper film on the surface of the first copper film. According to the method, a thin copper film is formed on the insulating substrate through sputtering plating or vapor plating firstly, and then copper plating is performed in an electrolytic manner so that the copper film is thickened. The speed of the electrolytic copper plating is higher than the speed of the sputtering plating or vapor plating, so that the thicker copper film is formed on the insulating substrate within a shorter time.

Description

technical field [0001] The invention belongs to the field of film coating, in particular to a method for preparing a copper film on an insulating material. Background technique [0002] In recent decades, material science has made great progress, and new materials with various excellent properties emerge in an endless stream. The choice of materials is no longer limited to a few traditional materials, but includes thousands of new materials of various types, properties and uses. [0003] Among the various branches of material science, the development of thin film material science has always occupied an extremely important position. Thin film materials are relative to bulk materials. People use special methods to prepare material layers on the surface of bulk materials with properties completely different from those of bulk materials. [0004] Copper film is a thin film material with a wide range of applications. At present, the main methods of preparing copper film on insu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C23C14/16C23C28/02
CPCC25D3/38C23C14/16C23C28/023
Inventor 吴德生崔子龙刘威林高
Owner TRULY OPTO ELECTRONICS
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