Floating gate memory unit and preparation method thereof

A memory cell and floating gate technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of complex process control and poor compatibility of the preparation process, so as to improve the reading and writing speed, reduce the signal propagation delay, reduce the The effect of crosstalk

Active Publication Date: 2018-11-02
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the process control is complicated, and it is necessary to form an air gap with a narrow top and a wide bottom wit...

Method used

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  • Floating gate memory unit and preparation method thereof
  • Floating gate memory unit and preparation method thereof
  • Floating gate memory unit and preparation method thereof

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Embodiment Construction

[0046] The present invention provides a floating gate memory unit and its preparation method. The core idea is to form an amorphous carbon (APF) side wall, after the deposition of a hole plug etch stop layer, and remove the APF by plasma to form an air gap side wall. Wall, reduce the parasitic capacitance of the hole plug and the gate, thereby reducing the signal propagation delay of the integrated circuit, improving the read and write speed, and improving the data retention capacity of the storage unit; reducing the parasitic capacitance between the floating gate storage units, effectively reducing the floating gate storage Crosstalk between units.

[0047] In the following, the present invention will be described in detail and specifically through specific embodiments and accompanying drawings, so as to better understand the present invention, but the following embodiments do not limit the scope of the present invention.

[0048] This embodiment provides a method for manufac...

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Abstract

The present invention relates to the field of semiconductor device manufacturing, in particular to a floating gate memory cell and a preparation method thereof. The method comprises the steps of forming a first sidewall thin film and a second thin film; after a plug is deposited in contact with an etch stop layer, removing the first sidewall thin film and the second sidewall thin film through plasma; forming an air-gap sidewall with the same feature as the sidewall; and forming a plurality of air gaps with the upper narrow and the lower wide, thereby overcoming the defects of crosstalk betweenthe floating gate memory cells and poor compatibility with the standard CMOS preparation process. The preparation method thereof in the invention effectively improves the read/write speed and the data maintaining ability of the memory cell, reduces the crosstalk between the floating gate memory cells, and improves the compatibility with the CMOS standard preparation technology.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a floating gate memory unit and a preparation method thereof. Background technique [0002] The rapid development of the information age has brought about a large number of data storage requirements, which promote the rapid development of non-volatile storage technology. Floating gate storage (including NAND (NAND flash memory) and self-aligned source process NorFlash) has become the current mainstream non-volatile storage technology, widely used in data centers, mobile terminals, smart terminals and other fields, and still showing The situation of continuous and rapid growth of demand. [0003] When the semiconductor industry evolves the process technology below 45nm, as the physical size of the floating gate flash memory unit shrinks, the space on both sides of the floating gate also needs to be reduced to increase the density of the memory unit. However, the...

Claims

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Application Information

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IPC IPC(8): H01L27/11521H01L21/28H01L29/423
CPCH01L29/40114H01L29/42324H10B41/30
Inventor 李翔刘哲宏许佑铨
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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