Semiconductor monocrystalline silicon cleaning agent and cleaning method thereof

Abstract

The invention discloses a semiconductor monocrystalline silicon cleaning agent and a cleaning method thereof, belongs to the technical field of monocrystalline silicon manufacturing and aims to solvethe problem of low monocrystalline silicon cleaning quality in the prior art. The semiconductor monocrystalline silicon cleaning agent is prepared from, by weight, 3 parts of non-ionic surface activeagent, 3 parts of triethanolamine, 9 parts of sulfonic acid and 45 parts of deionized water. The cleaning method utilizes the semiconductor monocrystalline silicon cleaning agent for monocrystalline silicon cleaning, mainly comprises the steps of clear water soaking, acid soaking, clear water soaking, spraying, ultrasonic cleaning and the like and produces the very good cleaning effect on monocrystalline silicon. Rough grains are firstly removed, and then fine grains are cleaned through ultrasonic waves, so that the good monocrystalline silicon cleaning effect and reasonable utilization of thecleaning agent are guaranteed, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon manufacturing, and in particular relates to a cleaning agent for semiconductor single crystal silicon, and also relates to a method for cleaning single crystal silicon by using the cleaning agent for semiconductor single crystal silicon. Background technique [0002] Monocrystalline silicon is the raw material for manufacturing semiconductor silicon devices, mainly used in the production of high-power rectifiers, transistors, diodes, switching devices, LED lighting and other fields. With the continuous advancement of science and technology, people's demand for monocrystalline silicon is gradually increasing, and the quality requirements for monocrystalline silicon are becoming more and more stringent. In the manufacturing process of monocrystalline silicon, many process steps such as slicing, grinding, chamfering, etc. will cause a large amount of impurities to be adsorbed on the s...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of poor cleaning quality of single crystal silicon wafers in the prior art, and provide a semiconductor single crystal silicon cleaning agent and its cleaning method with better cleaning effect