Vacuum hot pressing sintering preparation method of a high-purity tantalum-ruthenium alloy target

A technology of vacuum hot pressing sintering and ruthenium alloy, applied in the direction of vacuum evaporation plating, metal material coating process, coating, etc., can solve the problems of high cost of electron beam smelting equipment, affecting the performance of later products, and huge power matching. Achieve the effects of easy guarantee of target purity, stable microstructure and simple preparation process

Active Publication Date: 2020-07-28
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cost of electron beam melting equipment is extremely high and requires a huge amount of electric energy, so the production cost is very high
At the same time, tantalum-ruthenium alloy is a refractory metal with a melting point as high as 2300 ° C. The melting environment is an ultra-high temperature environment. In this environment, materials in the crucible, heating element, heat preservation parts and other environments are easily sublimated into the melt, resulting in the preparation of high-purity targets. Impurities are mixed in the medium, which seriously affects the performance of later products
The subsequent processing of the ingot requires repeated plastic processing and heat treatment, and these processes have buried hidden dangers for impurities to enter the target

Method used

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  • Vacuum hot pressing sintering preparation method of a high-purity tantalum-ruthenium alloy target
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  • Vacuum hot pressing sintering preparation method of a high-purity tantalum-ruthenium alloy target

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preparation example Construction

[0038] A method for preparing a high-purity tantalum-ruthenium alloy target by vacuum hot-pressing sintering, comprising the following steps:

[0039] (1) Crushing: respectively break the high-purity tantalum block and ruthenium block with a purity >99.95% into powders with a particle size of <2 mm, and sieve to obtain tantalum powder and ruthenium powder;

[0040] (2) Ball milling: Fill 99% nitrogen into the ball milling jar, under the protection of nitrogen, the tantalum powder and ruthenium powder obtained in step (1) are respectively ball milled until the particle size is 5-200 μm, and the volume average particle diameter is 50μm;

[0041] (3) Mixing: distribute the tantalum powder and ruthenium powder after ball milling in step (2) respectively according to the same standard, and take the powders whose particle size distribution is ≤50 μm, 80-150 μm and 160-200 μm during distribution. Powder, distributed according to the mass ratio of 2-3:3-4:1; then mixed according to t...

Embodiment 1

[0057] The industrially purified high-purity tantalum block and ruthenium block with a purity >99.95% are crushed into small particles of 3 ; The surface of the high-purity tantalum-ruthenium body is processed, and the size is processed according to the magnetron sputtering equipment to obtain a high-purity tantalum-ruthenium target.

Embodiment 2

[0059] The industrially purified high-purity tantalum and ruthenium blocks with a purity >99.95% are crushed into small particles of 3 ; The surface of the high-purity tantalum-ruthenium body is processed, and the size is processed according to the magnetron sputtering equipment to obtain a high-purity tantalum-ruthenium target.

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Abstract

The invention relates to a vacuum thermal pressing and sintering preparation method of a high-purity tantalum-ruthenium alloy target material, and belongs to the technical field of powder metallurgy.The preparation method comprises the steps of preparing raw material powder, mixing the powder, and thermally pressing and sintering the target material in vacuum. The preparation method specificallycomprises the steps of correspondingly crushing high-purity tantalum and ruthenium blocks until the diameter is less than 2mm, and screening to obtain tantalum powder and ruthenium powder; grinding the tantalum powder and the ruthenium powder under the particle size is 5-200 microns; mixing the grinded powder based on certain ratio to obtain a mixture; drying the mixture, and then feeding the mixture into a graphite die; transferring the die into a thermal pressing furnace for vacuum thermal pressing and sintering to obtain a blank of the f high-purity tantalum-ruthenium alloy target; and thenprocessing the blank based on the requirement of a magnetron sputtering coating device to obtain the high-purity tantalum-ruthenium alloy target material. With the adoption of the preparation method,the technical difficulty that an alloy target is hard to smelt by a traditional casting method can be obviously reduced; the controllability of the material structure and performance can be greatly improved; and the following film coating performance can be obviously improved.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy, and in particular relates to a method for preparing a high-purity tantalum-ruthenium alloy target by vacuum hot-pressing sintering. Background technique [0002] At present, electronic components are becoming increasingly small and miniaturized, so the requirements for the integration of integrated circuits and chips are getting higher and higher, resulting in increasingly stringent requirements for the thickness of the diffusion barrier layer in the preparation of integrated circuits. Many years ago, at the 45nm technology node of the chip, the thickness requirement of the diffusion barrier layer of the first metal wiring of the copper interconnection has reached 3.3nm. While being thinner, it must also have good semiconductor and mechanical properties. These quality requirements lead to the development of new materials and processes for the diffusion barrier layer. [0003] As a key ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C22C1/04C22C27/02B22F3/14
CPCB22F3/14B22F2003/145C22C1/045C22C27/02C23C14/3414
Inventor 逯峙游龙郭帅东王广欣邓舜兰杨斌张鹏飞闫焉服孙浩亮韩超刘海洋
Owner HENAN UNIV OF SCI & TECH
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