43results about How to "High controllability of process parameters" patented technology

The invention relates to a method for preparing a high-purity tantalum target for electronic materials, which belongs to the field of powder metallurgy and semiconductor device manufacturing. The preparation method is to pulverize a high-purity tantalum block first, and then ball mill it to a particle size of 5-150 μm. Tantalum powder; after mixing the tantalum powder, install the mold, vibrate and compact; then put the mold into a high-temperature hot-press furnace, and press at 1500-1800°C; after sintering, cool to room temperature and release the furnace to obtain high-purity Green body of tantalum target, density 11.3‑14.5g / cm 3 . According to the requirements of the magnetron sputtering equipment, the green body is cut and processed, and the processed green body is welded to the corresponding back plate according to the user's requirements to obtain a high-purity tantalum target. The high-purity tantalum target prepared by the present invention can significantly reduce the technical difficulty of preparing the target by the traditional casting method, greatly improve the controllability of the process, and contribute to the improvement of the coating performance of later materials.

The invention discloses a preparation process of a nano-structure wire mesh-ceramic composite lining metal pipe. It is composed of an outer casing (1) and a composite lining pipe (4), and the composite lining pipe (4) is composed of a wire mesh (2) and a ceramic wear-resistant material (3). Preparation process: Weaving wire mesh (2), cutting, preparing ceramic wear-resistant material (3), evenly coating on the wire mesh (2) and inserting ceramic particles into the gaps of the wire mesh (2), placing The composite plate body of the lining pipe is rolled and placed in the outer casing (1), and the composite lining pipe (4) and the outer casing (1) are rolled and cured by heating, so that the composite lining pipe (4) is closely attached Inside the outer sleeve (1). The invention has the advantages of strong controllability of process parameters, high yield, stable quality and high production efficiency. The product has a long service life, and its wear resistance is 8 to 10 times that of ordinary steel, and 4 to 6 times that of rare earth steel. This process is suitable for the production of pipe products of any shape and size, and has a wide range of applications, and the composite thickness can be adjusted.

The invention relates to a comb-shaped plastic-reserving agent with a poly-sulphoacid structure particularly suitable for low-slump concrete, which is prepared with allyl polyether, sodium styrene sulfonate and sodium alkyl sulfonate as raw materials. The average molecular weight of the allyl polyether is 400-1500, the feeding amount of the allyl polyether accounts for 50-92 percent of the total molecular weight of the raw materials; and the molar ratio of the sodium styrene sulfonate and the sodium alkyl sulfonate is 1:0.2-1:5. The preparation method comprises the following steps: mixing theaqueous solution of each raw material monomer, heating to 65-98 DEG C, adding an initiator ammonium persulfate solution, completing the dropping within 2-4 hours, maintaining the temperature for 1 hour, cooling until the temperature is below 40 DEG C, adding caustic soda liquid for neutralization, and taking out the product, thereby obtaining the plastic-reserving agent, a comb-shaped polymer with the poly-sulphoacid structure. The structure of the polymer combines the advantages of two water reducing agents, naphthalene and polycarboxylic acid. Therefore, the polymer can realize excellent plastic-reserving property of the low-slump concrete with the slump being 7-9cm. simultaneously; the polymer has good physical and chemical compatibility with the two water reducing agents, naphthalene and polycarboxylic acid.

The invention discloses a method for refining grains of large medium high alloy steel forgings in the technical field of metal heat treatment. The method comprises the following steps of: austenitizing the forged forgings, cooling to tip temperature of a perlitic transformation area, and isothermally keeping temperature or fluctuantly keeping temperature to realizing isothermal decomposition of pearlite; and cooling to room temperature, and performing the secondary austenitizing process to realize recrystallization to refine the grains again. The method solves the problem that the traditionalmultiple normalizing process in actual production has instable effect of refining the grains of the large forgings, and a serious phenomena of coarse grains and mixed grains. By incomplete isothermalbalanced decomposition of austenite, structure inheritance is cut off and eliminated, average austenite grain size above ASTM No.5 grade is achieved, the structure state of the large forgings is improved, the ultrasonic inspectability of the large forgings is improved; meanwhile, working hours are greatly shortened, the energy consumption is reduced, and the cost is saved.

The invention belongs to the technical field of thermoplastic forming and additive manufacturing of amorphous alloys, and specifically relates to a forging / additive composite manufacturing method of amorphous alloy parts, which first uses powder sintering technology to make amorphous alloy powder materials into pre-forged billets, Then place the pre-forged blank in a closed forging die for closed hot die forging to obtain the main structure of the amorphous alloy part. Finally, the energy field-assisted additive manufacturing technology is used on the main structure to process fine parts with relatively small sizes. structure, or some structures that cannot be formed by forging, such as thin-walled ribs, hollow shells, conformal cooling channels, etc. Correspondingly, a forging / additive composite manufacturing method for large-scale and complex amorphous alloy parts is obtained, especially the interface connection performance between the main structure of the amorphous alloy and the local fine structure is strengthened and improved.

The invention discloses a sol method for preparing electronic-grade ferric phosphate. The method comprises the steps of: preparing a mixed solution from a solution of one or more of phosphoric acid, monohydric phosphate or dihydric phosphate and a ferric salt at a molar ratio of P to Fe being (1:1)-(6:1), and stirring and heating at the temperature of 20-100 DEG C for 0.5-10 hours to form a buffer solution; then adding ferric phosphate sol to the buffer solution, thus changing the pH value and micro chemical environment of the system and promoting the separation of precipitate; and washing the precipitate, filtering and drying to prepare ultramicro fine powder ferric phosphate with D50 being 1-3 mu m. The method disclosed by the invention has the advantages that: the process is simple, the controllability of the process parameters is strong, the use raw materials are fewer, and the method is suitable for scaled industrial production; and ferric phosphate prepared by the method has low impurity content and uniform particle size distribution, and is suitable for being used for further preparing electronic-grade ferric phosphate lithium.

The preparation method of a kind of indapamide capsule of the present invention comprises preparation granulation liquid, adopts fluidized bed top spray one-step granulation, then sieves dry granule and mixes with lubricant evenly, finally granule is filled in hard capsule shell Indapamide capsules were prepared. The method reduces the process steps and shortens the preparation time, and the whole production process is prepared by airtight equipment, which is not easy to cause pollution to the environment and operators, and can greatly improve production efficiency; the inlet air temperature is below 70°C, and the production safety hazard is small, which is suitable for industrialization It has the advantages of low energy consumption and high safety production coefficient; it solves the problems of poor mixing uniformity and uneven release in the wet granulation process, good granule formability, high controllability of process parameters in the production process, reducing the influence of manual operations, and improving The quality stability of the drug can solve the problem of unqualified content uniformity of the product or low dissolution rate of the product.

The embodiment of the present invention discloses a method for preparing a zirconium alloy hot-rolled plate, including: forging a zirconium alloy ingot with a preset size and a preset weight after heat preservation, heat treatment, first surface treatment, forging after heat preservation, The second surface treatment, multi-pass hot rolling and vacuum annealing. The zirconium alloy hot-rolled medium-thick plate produced in the embodiment of the present invention has excellent corrosion resistance and mechanical properties, and has a uniform and fine structure, which meets the technical standard requirements for the zirconium alloy medium-thick plate used in nuclear reactors. The invention has simple process, short preparation process and low production cost, and is expected to change the long-term dependence on imports of domestic high-performance zirconium alloy medium-thick plates.

The invention relates to a method for preparing a metal ion-doped titanium dioxide target material and a target material thereby. The target material is prepared by adopting the steps of preparing metal ion-doped titanium dioxide powder through a solution reaction and compressing and sintering. The preparation process is simple and is easy to realize uniform doping of one or more metal ions; the doping amount of the ions can be precisely controlled, and the metal ions can enter a titanium dioxide crystal lattice in the preparation process to generate chemical bonding; the average crystal granularity of titanium dioxide in the prepared target material is below 200 nano, and the target material has high density; and the target material can be used for preparing a metal ion-doped titanium dioxide nano film by adopting a magnetron sputtering method.

The invention relates to a direct reduction process for producing sponge iron by using CH4 non-catalytic oxygen-enriched transformation. A process route comprises the following steps: preheating a CH4-enriched raw gas and oxygen-enriched air which are subjected to purification and pressure regulation, then introducing the CH4-enriched raw gas and the oxygen-enriched air into a non-catalytic oxygen-enriched transformation furnace for a combustion reaction in the non-catalytic oxygen-enriched transformation furnace, and raising the temperature to transform CH4 therein into CO and H2 to form a high-temperature transformation gas; in the meantime, cooling, dedusting and pressurizing a top gas of a shaft furnace, then introducing the top gas into a hydrogen purification device to prepare purified hydrogen, preheating the purified hydrogen, and then introducing the preheated purified hydrogen into the lower part of the catalyst oxygen-enriched transformation furnace to be mixed with the high-temperature transformation gas generated through the combustion reaction to form a reduced coal gas; and introducing the reduced coal gas into the shaft furnace to reduce iron ores into the sponge iron. The direction reduction process disclosed by the invention not only has the advantages of short process flow, availability for energy saving and emission reduction, long service life of a nozzle and low investment cost, and can be used to prevent the sponge iron from caking and avoid carbon formation.

The invention provides a preparation method of battery level microporous spherical iron phosphate. The preparation method comprises the following steps: mixing and heating a phosphoric acid solution and ferric iron salt, and reacting to form a concentrated solution; adding a 1-3 mol / L nitric acid solution, nano silicon dioxide of which the mass percent is 0.01-0.1% and deionized water into the concentrate at 75-85 DEG C to induce iron phosphate crystals to precipitate out by using the nano silicon dioxide as a crystal nucleus, filtering, washing, and drying to prepare a battery level iron phosphate material; and soaking the iron phosphate prepared in the previous step in hydrofluoric acid for 20-60 minutes, washing, and drying to finally prepare the microporous spherical iron phosphate material, wherein the iron phosphate product prepared in the previous step is etched due to the reaction of the hydrofluoric acid and the nano silicon dioxide. Thus, the electric conductivity and charging / discharging properties of subsequently prepared lithium iron phosphate can be further improved. The invention belongs to the technical field of iron phosphate preparation.

The invention provides a manufacturing method for a large tantalum plate, which comprises the following steps: 1, performing multi-pass cogging and rolling to a tantalum plate mold; 2, grinding and repairing the surface; 3, destressing and annealing; 4, performing multi-pass finished product rolling; and 5, performing annealing treatment to a finished product, and finally obtaining the large tantalum plate with the thickness of 0.5-2 mm, the width of 1000 mm-1300 mm, and the length of 1400 mm-2100 mm. The manufacturing method has the advantages of simple technological process, strong processing parameter controllability and easiness in industrialized mass production. The invention adopts the processing technique of first cogging rolling and then finished product rolling, controls and optimizes the rolling technique and the annealing schedule, finally obtains the large tantalum plate with good surface quality, high planeness and excellent mechanical property, solves the technical bottleneck that the present technique can not manufacture large tantalum plates continuously and stably, and really promotes the development of tantalum plates.

The invention belongs to the technical field of graphene materials and relates to a preparation method of a high quality graphene conductive film. The preparation method comprises the following steps: uniformly mixing natural flake graphite with mixed acid in a reactor, then adding an intercalator and stirring to react, and filtering, washing and drying to obtain layered graphite; then after microwave treatment of the layered graphite, dispersing the layered graphite in water for ultrasonic exfoliation to form a graphene aqueous liquid, and dispersing the centrifugalized graphene aqueous liquid in a solvent to obtain a graphene dispersion liquid; and then after ultrasonic treatment of the graphene dispersion liquid, forming a graphene thin film by virtue of dispensing or filtration of a cellulose filter membrane and polishing the surface of the graphene thin film, and furthermore, transferring the substrate and heating the graphene thin film to prepare the graphene conductive film. The preparation method is simple and convenient to operate, the controllability of process parameters is high and the production cost is low, and moreover, strong oxidants and toxic reducers are avoided, and the preparation method is environment-friendly.

The present invention discloses a transparent conductive WC thin film, the matrix of the WC thin film is amorphous, and the high-density WC microcrystals of a crystalline state are distributed in theamorphous matrix disorderly. The sizes of the WC microcrystals are about 5 nm, and the WC microcrystals are the hexagonal phase structures, the visible light transmissivity of the WC thin film reachesup to 85%, and the resistivity is low to 4.7*10-3 ohm cm. The atomic percent of the W:C in the WC thin film is 53.1:46.9, and the microhardness of the transparent conductive WC thin film is 21 GPa. The present invention also discloses a preparation method of the WC thin film. The preparation method adopts a radio frequency magnetron sputtering method, and takes a WC alloy as the target material and the Ar-CH4 as the working gas. After a reaction chamber is vacuumized to the base pressure higher than 1*10-4 Pa, an Ar-CH4 mixed gas is let in, and the WC thin film grows at a room temperature andin the plasma atmosphere of Ar and CH4, a mercury lamp is adopted to irradiate a substrate during a deposition process, and the wavelengths of the mercury lamp are 185 nm and 254 nm. By the dual effects of the plasma enhancement and the ultraviolet enhancement, the crystal quality of the room temperature growing WC thin film is improved.