Method for preparing In2S3 film by chemical bath deposition

A chemical water bath and film deposition technology, which is applied in the field of chemical water bath deposition to prepare In2S3 thin films, can solve the problems of environmental damage, achieve stable chemical composition, strong variability in substrate area and shape, and strong controllability of process parameters

Inactive Publication Date: 2012-08-22
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, during the use of these disposable energy sources, a large amount of harmful gases will be released, which will destroy the environment on which human beings live.

Method used

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  • Method for preparing In2S3 film by chemical bath deposition
  • Method for preparing In2S3 film by chemical bath deposition
  • Method for preparing In2S3 film by chemical bath deposition

Examples

Experimental program
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Effect test

Embodiment 1

[0028] A glass slide with an area of ​​76mm×25mm×1mm was used as the coating substrate. The substrate was first soaked in chromic acid washing solution for 30 minutes, then rinsed with deionized water for 5 times, then cleaned with ultrasonic vibration in acetone and ethanol for 5 minutes, and finally rinsed thoroughly with deionized water and then dried at 120°C for 0.5 hours. use.

[0029] Deionized water was used to prepare an aqueous solution, and the components were 0.1 mol / L of indium chloride and 1 mol / L of thioacetamide, and the pH was adjusted to 2.4 by adding acetic acid. After the solution was prepared at room temperature, the coating substrate was placed vertically in the prepared solution, and then the container containing the solution was placed in a constant temperature water bath with a temperature of 70°C, and it was deposited for 0.5h before taking it out. For the freshly deposited film, soak in deionized water for 15 minutes to remove surface residues and t...

Embodiment 2

[0032] A glass slide with an area of ​​76mm×25mm×1mm was used as the coating substrate. The substrate was first soaked in chromic acid washing solution for 30 minutes, then rinsed with deionized water for 5 times, then cleaned with ultrasonic vibration in acetone and ethanol for 10 minutes, and finally rinsed thoroughly with deionized water and then dried at 120 ° C for 1.0 h. use.

[0033] Deionized water was used to prepare an aqueous solution, and the components were 0.1 mol / L of indium chloride and 1 mol / L of thioacetamide, and the pH was adjusted to 2.4 by adding acetic acid. After the solution was prepared at room temperature, the coating substrate was placed vertically in the prepared solution, and then the container containing the solution was placed in a constant temperature water bath with a temperature of 70°C, and taken out after deposition for 1.0 h. For the freshly deposited film, soak in deionized water for 15 minutes to remove surface residues and then dry in ...

Embodiment 3

[0036] A glass slide with an area of ​​76mm×25mm×1mm was used as the coating substrate. The substrate was first soaked in chromic acid washing solution for 30 minutes, then rinsed with deionized water for 5 times, then cleaned with ultrasonic vibration in acetone and ethanol for 15 minutes, and finally rinsed thoroughly with deionized water and then dried at 120°C for 1.5 hours. use.

[0037] Deionized water was used to prepare an aqueous solution, and the components were 0.1 mol / L of indium chloride and 1 mol / L of thioacetamide, and the pH was adjusted to 2.4 by adding acetic acid. After the solution was prepared at room temperature, the coating substrate was placed vertically in the prepared solution, and then the container containing the solution was placed in a constant temperature water bath with a temperature of 70°C, and was taken out after deposition for 1.5 hours. For the freshly deposited film, soak in deionized water for 15 minutes to remove surface residues and th...

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Abstract

The invention discloses a method for preparing an In2S3 film by chemical bath deposition, which comprises the following steps: after soaking a filming substrate in a chromic acid washing liquid, washing with deionized water; sequentially washing by ultrasonic oscillation in acetone and ethanol for 5-20 minutes; after washing with deionized water, drying at the constant temperature of 120 DEG C for later use; vertically putting the filming substrate in a prepared deposited film water solution; putting the container containing the solution into a thermostatic water bath at 70 DEG C to deposit a film; and after soaking the deposited film in deionized water to remove surface residues, drying in air. Compared with the background technology, the In2S3 film prepared by the chemical bath deposition method has the advantages of stable chemical composition, single structure, strong controllability of technological parameters, simple preparation technique and equipment, and higher efficiency. The invention can provide more options for research of FeS2 film photoelectric conversion material buffer layers.

Description

technical field [0001] The invention relates to a method for preparing In 2 S 3 thin-film method, especially involving a chemical water-bath deposition for the preparation of In 2 S 3 thin film method. Background technique [0002] With the advancement of science and technology and the development of human civilization, the primary energy such as coal, oil and natural gas can no longer meet the needs, and its reserves are also rapidly decreasing. Moreover, during the use of these disposable energy sources, a large amount of gases harmful to humans will be released, destroying the environment on which humans depend. Among various renewable resources, inexhaustible solar energy has become the focus of new energy utilization and development. One of the main forms of development is to effectively convert sunlight energy into electrical energy for the benefit of mankind. [0003] A solar cell is a device that directly converts light energy into electrical energy. The photoel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22
Inventor 孟亮孪兆菊黄六一
Owner ZHEJIANG UNIV
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