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A kind of transparent conductive WC film and its room temperature growth method

A transparent conductive, thin-film technology, applied to conductive layers, circuits, electrical components and other directions on insulating carriers, can solve the problem of few WC studies, and achieve the effects of good transparency and conductivity, low deposition temperature, and high deposition rate.

Active Publication Date: 2019-11-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, people's research and development of WC are mainly concentrated in the field of cemented carbide, but there is little research on WC in the field of microelectronics and optoelectronics.

Method used

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  • A kind of transparent conductive WC film and its room temperature growth method
  • A kind of transparent conductive WC film and its room temperature growth method
  • A kind of transparent conductive WC film and its room temperature growth method

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0023] The invention provides a preparation method of a transparent conductive WC film: adopting the radio frequency magnetron sputtering method, using high-purity WC alloy as the target material, Ar-CH 4 It is the working gas; glass, quartz, PET or Si are respectively used as substrates, which are bombarded by Ar plasma before use; when the reaction chamber is evacuated to a background vacuum higher than 1×10 –4 After Pa, pass into Ar-CH 4 Mixed gas, the gas pressure is kept at 1.0 Pa during the deposition process, CH in the mixed gas 4 The content (in terms of pressure) is 6%; during the deposition process, a mercury lamp is used to irradiate the substrate, and the two main light-emitting wavelengths of the mercury lamp are 185 nm (about 10%) and 254 nm (about 90%); the target The spin rate was 30 rpm and the substrate spin rate was 40 rpm....

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Abstract

The present invention discloses a transparent conductive WC thin film, the matrix of the WC thin film is amorphous, and the high-density WC microcrystals of a crystalline state are distributed in theamorphous matrix disorderly. The sizes of the WC microcrystals are about 5 nm, and the WC microcrystals are the hexagonal phase structures, the visible light transmissivity of the WC thin film reachesup to 85%, and the resistivity is low to 4.7*10-3 ohm cm. The atomic percent of the W:C in the WC thin film is 53.1:46.9, and the microhardness of the transparent conductive WC thin film is 21 GPa. The present invention also discloses a preparation method of the WC thin film. The preparation method adopts a radio frequency magnetron sputtering method, and takes a WC alloy as the target material and the Ar-CH4 as the working gas. After a reaction chamber is vacuumized to the base pressure higher than 1*10-4 Pa, an Ar-CH4 mixed gas is let in, and the WC thin film grows at a room temperature andin the plasma atmosphere of Ar and CH4, a mercury lamp is adopted to irradiate a substrate during a deposition process, and the wavelengths of the mercury lamp are 185 nm and 254 nm. By the dual effects of the plasma enhancement and the ultraviolet enhancement, the crystal quality of the room temperature growing WC thin film is improved.

Description

technical field [0001] The invention belongs to the technical field of carbide semiconductors, in particular to a transparent conductive WC quasi-crystalline thin film and a growth method thereof at room temperature. Background technique [0002] Tungsten carbide (WC) is a typical cemented carbide material with a simple hexagonal structure. Hexagonal WC is stable until the temperature of 3049K. WC has very excellent physical and chemical properties, such as high hardness, high wear resistance, good thermal and chemical stability, good oxidation resistance, low thermal expansion coefficient, high elastic modulus, and has a certain degree of plasticity, and WC is Most binder phases wet out better than other carbides and are tougher than other carbides. In addition, WC also has high thermal conductivity and high electrical conductivity, which is beneficial for cutting applications. In view of the above advantages, WC, as a hard wear-resistant coating, is widely used in milita...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B1/02H01B13/00C23C14/35
CPCC23C14/35H01B1/02H01B5/14H01B13/00
Inventor 吕建国胡睿
Owner ZHEJIANG UNIV
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