Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A preparation method of high-purity tantalum target material for electronic materials

A technology for electronic materials and tantalum targets, which is applied in metal material coating technology, metal processing equipment, ion implantation plating, etc. Low rate and other problems, to achieve the effect of easy guarantee of product purity, lower preparation process temperature, and simple preparation process

Active Publication Date: 2020-08-28
HENAN UNIV OF SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When electron beam melting is used, due to the complex process, the melting process of the target material requires extremely high equipment conditions, so the preparation cost is very high
At the same time, since tantalum is a high-temperature refractory metal with a melting point close to 3000°C, and the preparation environment is an ultra-high temperature environment, high-purity tantalum is not only easily oxidized, but also impurity elements in the environment such as crucible materials can easily enter the melt, resulting in high-purity tantalum Impurities are mixed in the preparation, which seriously affects the performance of later products
Subsequent processing of high-purity ingots requires repeated plastic processing and heat treatment to make products. Since tantalum crystals are body-centered cubic, and the (111) crystal plane is its close-packed plane, it will slip preferentially during shaping processing, resulting in final plastic Most of the grain orientation of the product after shape processing is mainly (111), thus forming the "intrinsic texture band" of tantalum, which will cause the target sputtering rate to be low and the film thickness uneven, which seriously affects the quality of the tantalum target. Sputtering performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A preparation method of high-purity tantalum target material for electronic materials
  • A preparation method of high-purity tantalum target material for electronic materials
  • A preparation method of high-purity tantalum target material for electronic materials

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] A method for preparing a tantalum target for electronic materials, comprising the steps of:

[0034] (1) Crushing: the industrially purified high-purity tantalum block with a purity >99.95% is broken into a powder with a particle size of <2mm by a crusher, and then sieved to obtain a fine powder;

[0035] (2) Ball milling: fill the ball mill cylinder with nitrogen, and under the protection of nitrogen, the fine powder obtained in step (1) is ball milled by ball milling balls until the particle size is 5-150 μm, and the volume average particle size is 55-65 μm. Get tantalum powder;

[0036] (3) Molding: Take three kinds of tantalum powders with different particle sizes and mix them according to a certain ratio. The particle sizes of the three kinds of powders are D 1 、D 2 and D 3 , where D 1 =5-20μm, D 2 =45-75μm, D 3 =80-150μm; the particle size is D 1 、D 2 and D 3 The mass ratio of the three powders is 3-4:2-4:1-2; mix the above three powders evenly to obtain ...

Embodiment 1

[0050] The industrially purified high-purity tantalum block with a purity >99.95% is broken into small particles <2mm by a crusher, and ball milled under a protective atmosphere. The diameters of the balls are: 3mm, 7mm, and 10mm. The ratio is 10:5:2, the ratio of the total mass of the balls to the mass of the material is 2:1, and the ball mills until the particle size is in the range of 5-150 μm, and the volume average particle size is 55 μm. Take three kinds of powders with a particle size of 5 μm, 75 μm and 150 μm, mix them evenly according to the mass ratio of 4:3:2, put them into a high-strength graphite mold after drying, and use a gasket to separate the tantalum powder and the punch. Prevent sticking before placing in upper and lower die punches. Then vibrate and compact the powder into the lower pressure head of the high-temperature hot-press furnace, and adjust the position to ensure that the mold is located in the center of the lower pressure head to ensure that the ...

Embodiment 2

[0053] The industrially purified high-purity tantalum block with a purity >99.95% is broken into small particles of 3 ; The surface of the high-purity tantalum blank is ground and polished, and the size is processed according to the magnetron sputtering equipment to obtain a high-purity tantalum target.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a high-purity tantalum target for electronic materials, which belongs to the field of powder metallurgy and semiconductor device manufacturing. The preparation method is to pulverize a high-purity tantalum block first, and then ball mill it to a particle size of 5-150 μm. Tantalum powder; after mixing the tantalum powder, install the mold, vibrate and compact; then put the mold into a high-temperature hot-press furnace, and press at 1500-1800°C; after sintering, cool to room temperature and release the furnace to obtain high-purity Green body of tantalum target, density 11.3‑14.5g / cm 3 . According to the requirements of the magnetron sputtering equipment, the green body is cut and processed, and the processed green body is welded to the corresponding back plate according to the user's requirements to obtain a high-purity tantalum target. The high-purity tantalum target prepared by the present invention can significantly reduce the technical difficulty of preparing the target by the traditional casting method, greatly improve the controllability of the process, and contribute to the improvement of the coating performance of later materials.

Description

technical field [0001] The invention relates to the fields of powder metallurgy and semiconductor device manufacturing, in particular to a method for preparing a high-purity tantalum target. Background technique [0002] Magnetron sputtering coating has many advantages such as high uniformity and strong controllability, and has gradually become one of the most critical processes in the production process of integrated circuits and semiconductor chips. The quality of the sputtering target determines the coating effect of magnetron sputtering and the performance of semiconductor devices, so it has become an indispensable key material in the semiconductor field, especially in the chip manufacturing industry. The quality of the film formed after target sputtering, such as film thickness and uniformity, will significantly affect the performance of products in the semiconductor industry, and the film thickness and uniformity are almost entirely dependent on the structure of the ta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/14C23C14/35
CPCC23C14/3414C23C14/35B22F3/14B22F2998/10B22F2003/145B22F1/052B22F3/02B22F9/04
Inventor 逯峙王广欣郭帅东张鹏飞杨斌孙浩亮闫焉服
Owner HENAN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products