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Method used for preparing FeS2 film and capable of controlling precursor grain size

A technology of grain size and precursor, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as inability to receive transmitted light from substrates, difficulty in controlling film quality, unfavorable promotion and use, etc., to achieve crystal The particle size can be easily controlled, improving the performance level of the film, and the effect of strong variability in area and shape

Inactive Publication Date: 2012-07-11
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most technologies must change the vulcanization parameters and film properties at the same time, which will cause the influence of vulcanization parameters on the physical properties of the film to be mixed, making it difficult to control the quality of the film, which is not conducive to popularization and use.
Some technologies are forming FeS 2 Although the thin film process does not involve the change of vulcanization parameters, an opaque substrate (such as single crystal silicon) is used to control the crystallization process, so that FeS used in photoelectric conversion applications 2 The film cannot receive the light transmitted by the substrate and lacks practicality, and the cost of the substrate is high

Method used

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  • Method used for preparing FeS2 film and capable of controlling precursor grain size
  • Method used for preparing FeS2 film and capable of controlling precursor grain size

Examples

Experimental program
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Effect test

Embodiment 1

[0025] The coating substrate adopts an area of ​​26×76mm 2 The fully transparent glass slide was boiled in a saturated chromic acid solution for 15 minutes, rinsed with deionized water, then ultrasonically oscillated in acetone, absolute ethanol, and deionized water for 15 minutes, and finally dried at 200°C for 2 hours to obtain a crystal. Pure Fe films with a particle size of 30 nm.

[0026] The pure Fe film was sputtered in FJL-450 magnetron sputtering equipment, the substrate temperature was 200 ° C, and the temperature was kept for 0.5 h after sputtering to obtain a pure Fe film with a grain size of 30 nm and a thickness of 0.25 μm. The pure Fe membrane and the sulfur powder of the mass required to produce a nominal sulfur pressure of 80kPa at 400°C were packaged in a glass tube, and vacuumized and replaced with Ar gas 5 times before packaging. The packaged samples were vulcanized at 400°C for 40h.

Embodiment 2

[0028] The coating substrate adopts an area of ​​26×76mm 2 The fully transparent glass slides were boiled in saturated chromic acid solution for 15 minutes, rinsed with deionized water, then ultrasonically oscillated in acetone, absolute ethanol, and deionized water for 15 minutes, and finally dried at 200°C for 2 hours. Pure Fe film.

[0029] The pure Fe film was sputtered in FJL-450 magnetron sputtering equipment, the substrate temperature was 300 ° C, and the temperature was kept for 0.5 h after sputtering to obtain a pure Fe film with a grain size of 40 nm and a thickness of 0.28 μm. The pure Fe membrane and the sulfur powder of the mass required to produce a nominal sulfur pressure of 80kPa at 400°C were packaged in a glass tube, and vacuumized and replaced with Ar gas 5 times before packaging. The packaged samples were vulcanized at 450°C for 20h.

Embodiment 3

[0031] The coating substrate adopts an area of ​​26×76mm 2 The fully transparent glass slides were boiled in a saturated chromic acid solution for 15 minutes, rinsed with deionized water, then ultrasonically oscillated in acetone, absolute ethanol, and deionized water for 15 minutes, and finally dried at 200°C for 2 hours.

[0032]The pure Fe film was sputtered in FJL-450 magnetron sputtering equipment, the substrate temperature was 400 ° C, and the temperature was kept for 0.5 h after sputtering to obtain a pure Fe film with a grain size of 40 nm and a thickness of 0.30 μm. The pure Fe film and the sulfur powder of the mass required to produce a nominal sulfur pressure of 80kPa calculated at 400°C were packaged in a glass tube. Before packaging, the vacuum was evacuated and replaced with Ar gas 5 times. The packaged samples were vulcanized at 500°C for 10h.

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Abstract

The invention discloses a method used for preparing a FeS2 film and capable of controlling precursor grain size. A coating substrate is boiled in saturation chromic acid solution, washed with deionized water, and washed and dried through ultrasonic oscillation in acetone, absolute ethyl alcohol and deionized water sequentially. A pure Fe film is sputtered, and temperature and thickness of the substrate are controlled. The pure Fe film and sulphur powder are packaged in a glass tube to be processed through sulfidizing. The method can obtain fine and even precursor ferrum film grain size, and the grain size can be controlled conveniently. The method can use optimization of different technology of optimizing precursor film sputtering and following sulfidizing and flexibly controls quality and state of the finally obtained FeS2 film. A control means and a control process are flexible, optimization of preparation technology is facilitated, and more choices for industrial production of the FeS2 film are also provided.

Description

technical field [0001] The invention relates to a method for preparing FeS 2 thin-film method, especially one that involves the preparation of FeS by controlling the precursor grain size 2 thin film method. Background technique [0002] At present, primary energy sources such as coal, oil and natural gas can no longer meet the needs, and the reserves are also rapidly decreasing. Inexhaustible and inexhaustible solar energy has become the focus of new energy utilization and development, and one of the main forms of development is to effectively convert solar energy into electrical energy to benefit mankind. FeS 2 It has a suitable band gap and high light absorption coefficient, and its constituent elements are abundant and non-toxic. It is a solar cell material with great development potential. A solar cell is a device that directly converts light energy into electrical energy, and the photoelectrode material is the core of the solar cell. At present, some new solar cell ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/22C23C14/06H01L31/18
CPCY02P70/50
Inventor 孟亮王峰汪牡丹
Owner ZHEJIANG UNIV
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