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Gate driver monolithic and repairing method thereof

A gate drive circuit and path technology, applied in the direction of instruments, static indicators, etc., can solve problems such as unfavorable repair, complex repair, and inability to achieve thin-film transistor-level repair, etc., and achieves a reduction in the probability of damage or damage and a reduction in area. Effect

Inactive Publication Date: 2018-11-06
NANJING CEC PANDA LCD TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This repair method needs to place additional repair lines in the gate drive circuit, and the repair is also relatively complicated, which is not conducive to large-scale repair during factory production. For details, please refer to patents: CN201510739886 and CN201610051710
[0005] In addition, the channel width of some important thin film transistors in the gate drive circuit is often too large. There is only one thin film transistor for a certain function, and it is generally impossible to repair the thin film transistor level if it is damaged.

Method used

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  • Gate driver monolithic and repairing method thereof
  • Gate driver monolithic and repairing method thereof
  • Gate driver monolithic and repairing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0060] Such as figure 2 As shown, the first original thin film transistor M10 in the pull-up module 22 (such as figure 1 ) is replaced by the first thin film transistor M10A and the second thin film transistor M10B, and spaces for laser cutting of the gate, source and drain of the first thin film transistor M10A and the second thin film transistor M10B are reserved on the layout.

[0061] The first thin film transistor M10A and the second thin film transistor M10B are smaller in area and channel width than the first original thin film transistor M10 .

[0062] Specifically, the pull-up module 22 includes a clock signal input terminal 31, a first pull-up control node terminal 32, a gate scanning signal output terminal 33, a double-gate connection terminal 34, a first thin film transistor M10A, a second thin film transistor M10B, a first A capacitor Cb1 and a second capacitor Cb2; the clock signal input terminal 31 inputs the first clock signal CKm, the first pull-up control n...

Embodiment 2

[0075] Such as Figure 4 As shown, the second original thin film transistor M1 in the pull-up control module 21 (such as figure 1 ) is replaced by the third thin film transistor M1A and the fourth thin film transistor M1B, and spaces for the third thin film transistor M1A and the fourth thin film transistor M1B to realize laser cutting of the gate, source and drain are reserved on the layout.

[0076] The first thin film transistor M1A and the second thin film transistor M1B are smaller in area and channel width than the second original thin film transistor M1.

[0077] Specifically, as Figure 5 As shown, the pull-up control module 21 includes a pull-up control signal input terminal 41, a second pull-up control node terminal 42, a first metal line connection terminal 43, a second metal line connection terminal 44, a third thin film transistor M1A and a fourth For the thin film transistor M1B, the pull-up control signal input terminal 41 inputs the nth stage pull-up control ...

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Abstract

The invention discloses a gate driver monolithic and a repairing method thereof. According to the gate driver monolithic, certain thin film transistors having important functions or excessive channelwidths in an existing circuit structure are replaced with two or more independent units, and laser cutting or connecting spaces are reserved on a layout for the gates, the sources, and the drains of respective independent units. When one or more independent units are damaged or broken, the damaged or broken units are cut and isolated and the unharmed units continue working, thereby achieving repairability at a thin film transistor level. While the repairability is achieved, the thin film transistors with small area can reduce a damaging or breaking probability in the process flow. It is not required to dispose additional candidate shift registers and repair lines in the gate driver monolithic area. A repair process generally requires only laser cutting and connecting operations such that the repairing method is simple and is suitable for large-scale operations.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a gate drive circuit and a repair method thereof. Background technique [0002] In thin film transistor (TFT, Thin Film Transisitor) display devices, gate driver monolithic (GDM, Gate Driver Monolithic) technology has the advantages of reducing manufacturing costs, reducing module bonding (bonding) time, and realizing narrow borders. [0003] But it should be noted at the same time that the gate drive circuit is composed of several shift registers (generally hundreds to thousands), and a shift register contains several thin film transistors (generally several to dozens indivual). Therefore, the gate drive circuit is generally composed of tens of thousands of thin film transistors. If one of the thin film transistors is damaged or damaged, it is likely to cause a defective panel, which will affect the yield of the panel. Therefore, the realization of gate drive circuit Repairab...

Claims

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Application Information

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IPC IPC(8): G09G3/20
CPCG09G3/20G09G2310/0267G09G2310/0286
Inventor 陈旭戴超王志军
Owner NANJING CEC PANDA LCD TECH
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