A kind of Y-gate semiconductor device manufacturing method and semiconductor device
A device manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of many steps in Y-gate semiconductor manufacturing, and achieve the effects of improving efficiency, reducing costs, and reducing steps and processes.
Active Publication Date: 2019-06-21
福建省福联集成电路有限公司
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Problems solved by technology
[0003] For this reason, it is necessary to provide a method for manufacturing a Y-gate semiconductor device and a semiconductor device to solve the problem that the existing Y-gate semiconductor has many manufacturing steps
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[0037] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.
[0038] First, explain the English nouns that may appear:
[0039] 1. YGB: Y-Gate Bottom, Y-gate bottom photolithography process;
[0040] 2. YGT: Y-Gate Top, Y-gate top photolithography process;
[0041] 3.YGD: Y-Gate Deposition, Y gate metallization deposition process;
[0042] 4.1PN: 1st Passivation Nitride, the first passivation layer nitride deposition process;
[0043] 5.1MD: 1st Metal Deposition, the first metal layer deposition process;
[0044] 6.2PN: 2nd Passivation Nitride, the second passivation layer nitride deposition process;
[0045] 7.PP: Polyimide Passivation, polymer passivation flat layer process;
[0046] 8.2MD: 2nd Metal Deposition, the second metal layer deposition process;
[0047] 9.3PN: 3rd Passivation N...
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The invention discloses a Y-gate semiconductor device manufacturing method and a semiconductor device. The Y-gate semiconductor device manufacturing method comprises the following steps: coating an epitaxial wafer with Y-gate metal with a nitride; coating the nitride with a first optical resist; carrying out exposure developing on the first optical resist so as to form openings at the top positions of a drain electrode metal, a source electrode metal and a Y gate; etching to remove first nitride layers at the positions of the drain electrode metal, the source electrode metal and the Y gate; etching to remove the first optical resist; and coating a second optical resist. Through the technical scheme, the epitaxial wafer with the Y-gate metal is coated with different optical resists, the openings are formed in the top positions of the drain electrode metal, the source electrode metal and the Y gate, and metal layers are evaporated at the positions of the drain electrode metal, the sourceelectrode metal and the Y gate simultaneously during metal evaporation, so that the step process of the manufacturing technology is reduced, the efficiency is improved, and the cost is also reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a Y-gate semiconductor device and a semiconductor device. Background technique [0002] The production process of the Y gate semiconductor device before the present invention is improved is as figure 1 As shown, generally go through the following processes: epitaxial wafer surface treatment and device source / drain metallization process - Y gate bottom photolithography process - Y gate top photolithography process - Y gate metallization deposition process - the first A passivation layer nitride deposition process - the first metal layer deposition process - the second passivation layer nitride deposition process - polymer passivation flat layer process - the second metal layer deposition process - the third passivation Layer nitride deposition process, etc. In order to improve the conductivity at the Y gate, since the length of the ...
Claims
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IPC IPC(8): H01L21/336H01L21/28H01L29/417H01L29/423H01L29/78
CPCH01L29/401H01L29/41758H01L29/42356H01L29/66477H01L29/78
Inventor 陈智广许孟凯吴淑芳陈胜男林伟铭林张鸿林豪詹智梅
Owner 福建省福联集成电路有限公司