Method for manufacturing a semiconductor device and semiconductor device

A device manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of Y-gate semiconductor manufacturing steps, etc., to improve efficiency, reduce step process, reduce cost effect

Active Publication Date: 2019-06-21
福建省福联集成电路有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For this reason, it is necessary to provide a semiconductor device manufacturing method and a semiconductor device to solve the problem that there are many manufacturing steps of the existing Y-gate semiconductor

Method used

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  • Method for manufacturing a semiconductor device and semiconductor device
  • Method for manufacturing a semiconductor device and semiconductor device
  • Method for manufacturing a semiconductor device and semiconductor device

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Embodiment Construction

[0035] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0036] First, explain the English nouns that may appear:

[0037] 1. YGB: Y-Gate Bottom, Y-gate bottom photolithography process;

[0038] 2. YGT: Y-Gate Top, Y-gate top photolithography process;

[0039] 3.YGD: Y-Gate Deposition, Y gate metallization deposition process;

[0040] 4.1PN: 1st Passivation Nitride, the first passivation layer nitride deposition process;

[0041] 5.1MD: 1st Metal Deposition, the first metal layer deposition process;

[0042] 6.2PN: 2nd Passivation Nitride, the second passivation layer nitride deposition process;

[0043] 7.PP: Polyimide Passivation, polymer passivation flat layer process;

[0044] 8.2MD: 2nd Metal Deposition, the second metal layer deposition process;

[0045] 9.3PN: 3rd Passivation N...

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Abstract

The invention discloses a semiconductor-apparatus manufacturing method and a semiconductor apparatus. The semiconductor-apparatus manufacturing method includes the steps that an epitaxial wafer is coated with first photoresist; exposure and development are carried out on the first photoresist to form openings at a drain metal position, a source metal position and a Y gate position; the epitaxial wafer and the first photoresist are coated with second photoresist; exposure and development are carried out on the second photoresist to form openings at the drain metal position, the source metal position and the Y gate position; metal evaporation sedimentation is carried out, Y gate metal is formed at the Y gate position, and first metal layers are formed at the drain metal position and the source metal position; the first photoresist and the second photoresist are removed through etching. According to the technical scheme, the epitaxial wafer is coated with different pieces of photoresist,the openings are formed in the drain metal position, the source metal position and the Y gate position, when metal evaporation is carried out, metal layers are simultaneously evaporated at the drain metal position, the source metal position and the Y gate position at a time, step procedures of the manufacturing technology are reduced, efficiency is improved, and the cost is also reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device manufacturing method and a semiconductor device. Background technique [0002] The production process of the Y gate semiconductor device before the present invention is improved is as figure 1 As shown, generally go through the following processes: epitaxial wafer surface treatment and device source / drain metallization process - Y gate bottom photolithography process - Y gate top photolithography process - Y gate metallization deposition process - the first A passivation layer nitride deposition process - the first metal layer deposition process - the second passivation layer nitride deposition process - polymer passivation flat layer process - the second metal layer deposition process - the third passivation Layer nitride deposition process, etc. Each process includes multiple processing processes, such as surface cleaning, exposure a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L23/14
CPCH01L21/02365H01L23/14
Inventor 许孟凯陈胜男陈智广吴淑芳林伟铭林张鸿林豪詹智梅
Owner 福建省福联集成电路有限公司
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