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Total-on-chip-integration drive bootstrap circuit

A bootstrap circuit and internal integration technology, applied in the direction of electrical components, output power conversion devices, etc., can solve the problems of increasing cost, disadvantageous bootstrap circuit integration, etc., and achieve the effect of saving area and cost

Active Publication Date: 2018-11-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The circuit structure of this scheme is simple and easy to implement, but it requires a large off-chip capacitor Co to ensure the stability of the output of the LDO, which increases the cost and is not conducive to the integration of the bootstrap circuit

Method used

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  • Total-on-chip-integration drive bootstrap circuit
  • Total-on-chip-integration drive bootstrap circuit
  • Total-on-chip-integration drive bootstrap circuit

Examples

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Embodiment Construction

[0029] The following is a detailed description of the present invention by taking the application of the present invention in BUCK as an example in combination with the accompanying drawings and specific embodiments. All DC / DC conversion circuits are equally applicable.

[0030] Because the traditional drive bootstrap scheme usually requires the low dropout linear regulator LDO circuit inside the chip to have a large output capacitor, that is, the large off-chip capacitor Co, to ensure that the internal power supply has sufficient charging capacity for the bootstrap capacitor Cboot, if the chip If there is no pin connected to the off-chip large capacitor Co, a separately designed bootstrap capacitor charging circuit structure is required to charge the bootstrap capacitor Cboot to save PCB area and chip usage cost. like figure 2 Shown is an improved structure that removes the off-chip large capacitor Co in the traditional driving bootstrap scheme. The voltage across the boots...

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PUM

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Abstract

The invention relates to a total-on-chip-integration drive bootstrap circuit and belongs to the technical field of electronic circuits. The total-on-chip-integration drive bootstrap circuit comprisesa low dropout regulator, a Schottky diode and a bootstrap capacitor and is characterized in that one end of the bootstrap capacitor is connected with the negative electrode of the Schottky diode and outputs power supply voltage, and the other end of the bootstrap capacitor is connected with the switch node of a DC / DC conversion circuit; the low dropout regulator comprises an error amplifier, an anti-interference module and an LDO power tube, the inverted input end of the error amplifier is connected with reference voltage, and the output end of the error amplifier is connected with the grid ofthe LDO power tube; the source of the LDO power tube is connected with input voltage, and the drain of the LDO power tube is connected with the positive electrode of the Schottky diode; in the anti-interference module, a current mirror is used to convert voltage at two ends of the bootstrap capacitor into currents, and the currents are connected with the non-inverting input end of the error amplifier through a current buffer structure and a feedback network. The total-on-chip-integration drive bootstrap circuit is applicable to the DC / DC conversion circuit, does not need off-chip large capacitors and can achieve on-chip integration, and the area and cost of the circuit are reduced.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to a driving bootstrap circuit suitable for a DC / DC conversion circuit. Background technique [0002] In the BUCK circuit of the switching power supply, it is necessary to control the turn-on of the upper and lower power tubes through the driving circuit. When the lower power transistor is turned on, the potential at the switch node SW is pulled to a low level. When the upper power transistor is turned on, the potential at the switch node SW is close to the input voltage VIN. Since the potential at the switch node SW changes with the power transistor being turned on, in order to ensure that the upper power transistor is turned on, it is necessary to make the gate potential of the upper power transistor change with the change of the potential at the switch node SW. For consideration of efficiency and other factors, the upper power tube and the lower power tu...

Claims

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Application Information

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IPC IPC(8): H02M1/088
Inventor 明鑫辛杨立范子威罗淞民张宣潘溯王卓张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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