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Preparation method of silicon dioxide-coated ytterbium-erbium-doped gadolinium trifluoride band-jacketed nanoribbon

A technology of silica and gadolinium trifluoride, applied in chemical instruments and methods, nanotechnology, rayon of inorganic raw materials, etc.

Active Publication Date: 2020-10-16
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no single-axis electrospinning technology to prepare [GdF 3 :10%Yb 3+ ,0.5%Er 3 + ]@SiO 2 Related Reports of Tape-in-Tape Nanobelts

Method used

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  • Preparation method of silicon dioxide-coated ytterbium-erbium-doped gadolinium trifluoride band-jacketed nanoribbon
  • Preparation method of silicon dioxide-coated ytterbium-erbium-doped gadolinium trifluoride band-jacketed nanoribbon
  • Preparation method of silicon dioxide-coated ytterbium-erbium-doped gadolinium trifluoride band-jacketed nanoribbon

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Experimental program
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Effect test

Embodiment

[0027] Embodiment: take by weighing 0.6905g Gd 2 o 3 , 0.0839g Yb 2 o 3 and 0.0041g Er 2 o 3 , where Gd 3+ :Yb 3+ :Er 3+ The molar ratio is 0.895:0.100:0.005, with nitric acid HNO 3 After dissolving and evaporating to dryness, Gd(NO 3 ) 3 , Yb(NO 3 ) 3 and Er(NO 3 ) 3 Add 7.8000g DMF, 0.6000g TEOS and 1.6800g PVP to the mixture, stir magnetically at room temperature for 6h, and let it stand for 2h to form a spinning solution; using uniaxial electrospinning technology, inject the spinning solution into a tube with In a 10mL syringe with a 1mL plastic spray gun head, insert a copper wire into the spinning solution and connect it to the positive terminal of the high-voltage DC power supply. The angle between the spray gun head and the horizontal plane is 30°. Ground, use another copper wire to connect the barbed wire to the zero-potential terminal of the high-voltage DC power supply, the distance between the spray gun head and the barbed wire of the receiving screen...

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Abstract

The invention relates to a preparation method of silicon dioxide-coated ytterbium-erbium-doped gadolinium trifluoride band-jacketed nano-belts, and belongs to the technical field of quasi-one-dimensional nano-material preparation. The present invention comprises three steps: (1) prepare spinning solution; (2) adopt uniaxial electrospinning technology to prepare PVP / [Gd(NO 3 ) 3 +Yb(NO 3 ) 3 +Er(NO 3 ) 3 +TEOS] pristine composite nanoribbons; (3) preparation of [GdF 3 :10%Yb 3+ ,0.5%Er 3+ ]@SiO 2 Tape-covered nanoribbons. The prepared band-in-a-band nanoribbon has a width of 3.85±0.06 μm, a thickness of 133 nm and a length of more than 50 μm, and has green and red up-conversion luminescence and magnetism. The preparation method of the invention is simple and easy, and can be mass-produced. The quasi-one-dimensional nanometer material with a special structure has broad application prospects.

Description

technical field [0001] The invention relates to the research field of preparation of quasi-one-dimensional nanometer materials, in particular to a preparation method of silicon dioxide-coated ytterbium-doped erbium-doped gadolinium trifluoride band-cuffed nano-belts. Background technique [0002] The preparation and properties of inorganic nanoribbons are currently one of the frontier hotspots in materials science, condensed matter physics, chemistry and other disciplines. Nanoribbon is a kind of nanomaterial with ribbon structure synthesized by artificial method. Its cross section is a rectangular structure, its thickness is on the order of nanometers, its width can reach micron level, and its length can reach hundreds of microns, even several mm. Nanobelts have attracted great attention because of their novel structures different from tubes and wires, and their unique optical, electrical, and magnetic properties. [0003] Gadolinium trifluoride GdF 3 Widely used in the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): D01F9/08C09K11/85C09K11/02B82Y40/00
CPCB82Y40/00C09K11/025C09K11/7772D01F9/08
Inventor 董相廷李丹马千里王进贤于文生刘桂霞杨铭于辉
Owner CHANGCHUN UNIV OF SCI & TECH