Unlock instant, AI-driven research and patent intelligence for your innovation.

A grid modulation circuit of ldmos solid-state power amplifier

A solid-state power and modulation circuit technology, which is applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of LDMOS device shutdown tailing phenomenon, power amplifier modulation pulse output, etc., and achieve adjustable gate voltage amplitude , high reliability, convenient effect

Active Publication Date: 2020-02-28
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the distributed capacitance between the gate and source of the LDMOS device, the discharge time is required when the modulation pulse is at a low level, resulting in a tailing phenomenon in the shutdown of the LDMOS device, and the trailing edge of the modulation pulse output of the power amplifier is relatively large, which is difficult to meet the required pulse. When the delay is small and the front and rear edges are small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A grid modulation circuit of ldmos solid-state power amplifier
  • A grid modulation circuit of ldmos solid-state power amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Such as figure 1 as shown, figure 1 It is a circuit diagram of the gate modulation circuit of the LDMOS solid-state power amplifier of the present invention; the gate modulation circuit of the LDMOS solid-state power amplifier of the present invention includes an adjustable voltage stabilized power supply, a buffer, a turn-on circuit, and a turn-off circuit.

[0023] Specifically, the adjustable regulated power supply includes a first resistor R1, a potentiometer RP1, a first energy storage capacitor C1, a second energy storage capacitor C2, and a voltage regulator U1.

[0024] The voltage regulator U1 includes a first pin, a second pin, a third pin, a fourth pin, a fifth pin, a sixth pin, a seventh pin, and an eighth pin, and the first pin One pin is an en pin, the second pin is a gnd pin, both the third pin and the fourth pin are in pins, and the fifth pin and the sixth pin are both The vout pin, the seventh pin is the sen pin, and the eighth pin is the adj pin.

...

Embodiment 2

[0039] Specifically, the specific working principle of the gate modulation circuit of the LDMOS solid-state power amplifier of the present invention is that the output voltage of the voltage regulator U1 can be adjusted through the first resistor R1 and the potentiometer RP1, and the appropriate The resistance value of the first resistor R1 and the potentiometer RP1 can control the output voltage range of the voltage regulator U1 between 0.8V-5V.

[0040] When the external TTL modulation signal is at a low level, the first output terminal of the buffer U2 outputs a low level, the second output terminal outputs a high level, the open transistor V1 is cut off, and the off transistor V3 is turned on, the gate voltage of the LDMOS tube is 0V, and the LDMOS tube is cut off, so as to ensure that the LDMOS solid-state power amplifier is in the cut-off state, and there is no signal output, which ensures a reliable cut-off; when the external TTL modulation signal is high level , the fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a grid modulation circuit of an LDMOS solid-state power amplifier, which comprises an adjustable voltage-stabilized power supply, a buffer, a turn-on circuit and a turn-off circuit. The adjustable voltage-stabilized power supply is connected with an LDMOS transistor through the turn-on circuit. The buffer is connected with the LDMOS transistor through the turn-on circuit and the turn-off circuit. The adjustable voltage-stabilized power supply provides stable output voltage. The buffer, the turn-on circuit and the turn-off circuit are connected with the LDMOS transistorto achieve state switch and adjustment of the LDMOS solid-state power amplifier. Through the adjustable voltage-stabilized power supply, the non-inverting / inverting buffer, the turn-on circuit and theturn-off circuit, the grid modulation circuit of the LDMOS transistor is achieved, the grid voltage range of the LDMOS transistor can be adjusted, the pulse waveform leading edge time and the pulse waveform trailing edge time can be adjusted, the circuit is simple, easy to realize and high in reliablity.

Description

technical field [0001] The invention relates to the technical field of microwave solid-state power amplifiers, in particular to a gate modulation circuit of an LDMOS solid-state power amplifier. Background technique [0002] LDMOS (Laterally Diffused Metal Oxide Semiconductor) is a microwave power device with huge market demand and broad development prospects. Because LDMOS has the advantages of high linearity, high gain, high reliability, etc., it has been widely used in civilian fields. At present, silicon microwave LDMOS has become an important choice for base station power technology. In addition, the overall performance of the system has been greatly improved after the wideband frequency modulation transmitter, the transmitter of the digital terrestrial television system, and the airborne transponder use LDMOS transistors. [0003] Compared with microwave power bipolar devices, microwave power LDMOS transistors have no secondary breakdown, large safe operating area, n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
CPCG05F1/561
Inventor 徐晓荣
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST