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Semiconductor structures and methods of making them

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as structural defects

Active Publication Date: 2022-03-18
GUANGDONG GREATER BAY AREA INST OF INTEGRATED CIRCUIT & SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main purpose of this application is to provide a semiconductor structure and its fabrication method to solve the problem of many defects in the structure produced by the bonding method in the prior art

Method used

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  • Semiconductor structures and methods of making them
  • Semiconductor structures and methods of making them
  • Semiconductor structures and methods of making them

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] The fabrication process of the semiconductor structure includes:

[0058] Forming the first to-be-bonded structure 10 comprising a sacrificial layer 11 and a structure layer 12 disposed on the surface of the sacrificial layer 11, such as image 3 As shown, the sacrificial layer 11 includes a first silicon layer 111 and a buffer layer 112 disposed on the surface of the first silicon layer 111 , and the structural layer 12 is disposed on the surface of the buffer layer 112 away from the first silicon layer 111 . Specifically, the structural layer 12 is a germanium layer, and the buffer layer 112 is also a germanium layer;

[0059] forming a second structure to be bonded 20 comprising a second silicon layer 21 and a silicon oxide layer 22 stacked in sequence, such as image 3 shown;

[0060] Aligning the first structure to be bonded 10 and the second structure to be bonded 20 so that the structure layer 12 and the silicon oxide layer 22 are arranged oppositely;

[0061]...

Embodiment 2

[0064] The fabrication process of the semiconductor structure includes:

[0065] Forming the first to-be-bonded structure 10 comprising a sacrificial layer 11 and a structure layer 12 disposed on the surface of the sacrificial layer 11, such as image 3 As shown, the sacrificial layer 11 includes a first silicon layer 111 and a buffer layer 112 disposed on the surface of the first silicon layer 111 , and the structural layer 12 is disposed on the surface of the buffer layer 112 away from the first silicon layer 111 . Specifically, the structural layer 12 is a germanium-tin layer, and the buffer layer 112 is a germanium layer;

[0066] Forming a second structure to be bonded 20 comprising a second silicon layer 21 and a silicon oxide layer 22 stacked in sequence, such as image 3 shown;

[0067] Aligning the first structure to be bonded 10 and the second structure to be bonded 20 so that the structure layer 12 and the silicon oxide layer 22 are oppositely disposed;

[0068] ...

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Abstract

The application provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: step S1, forming a first structure to be bonded and a second structure to be bonded, the first structure to be bonded includes a sacrificial layer and a structural layer to be bonded, and the structural layer and the sacrificial layer form a heterojunction; Step S2, applying force F to the first to-be-bonded structure and / or the second to-be-bonded structure and maintaining it for a predetermined time, so that the first to-be-bonded structure and the second to-be-bonded structure fit together, and the structure layer and the second to-be-bonded structure The two structures to be bonded are in contact, and the first structure to be bonded and the second structure to be bonded are heated to form a pre-semiconductor structure; Step S3 , the sacrificial layer is removed to form a semiconductor structure. The fabrication method introduces strain into the structural layer to form a strained structural layer with better quality, thereby forming a semiconductor structure with better performance.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a semiconductor structure and a manufacturing method thereof. Background technique [0002] Light with a wavelength between 1.5 and 2.4 μm is in the short-wave infrared region and is widely used in civil and military fields. [0003] Germanium is a group IV element in the periodic table of chemical elements. The conduction band in its bandgap structure has two minimum values, one is 0.86eV, called the direct bandgap or photonic bandgap, and the other is 0.66eV, called is the indirect or electronic band gap. The photonic bandgap is associated with light at a wavelength of 1.5 μm, which allows germanium to be used in telephony, but longer wavelengths introduced by stress engineering methods are more promising in the short-wave infrared region. [0004] Silicon and germanium have a 4.2% lattice mismatch, which makes germanium more prone to defects when grown on silicon, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02381H01L21/02535H01L21/02664
Inventor 亨利·H·阿达姆松王桂磊
Owner GUANGDONG GREATER BAY AREA INST OF INTEGRATED CIRCUIT & SYST