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Ultrasonic wave fingerprint recognition sensor and manufacture method thereof

A fingerprint recognition and production method technology, which is applied in character and pattern recognition, acquisition/organization of fingerprints/palmprints, instruments, etc., can solve the problems of high production cost, small penetration thickness, low resolution, etc., and achieve low production cost. , the effect of high penetration film thickness, high resolution and signal-to-noise ratio

Active Publication Date: 2018-11-30
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the process of making the ultrasonic fingerprint recognition sensor, the PVDF film is prepared by Spin coating or Slot Coating, and the Tx (transmitting) electrode is prepared by screen printing, which makes the finished product have high production cost. Disadvantages of low resolution, low signal-to-noise ratio and small penetration thickness

Method used

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  • Ultrasonic wave fingerprint recognition sensor and manufacture method thereof
  • Ultrasonic wave fingerprint recognition sensor and manufacture method thereof
  • Ultrasonic wave fingerprint recognition sensor and manufacture method thereof

Examples

Experimental program
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Embodiment 1

[0021] figure 2 It is a schematic structural diagram of the ultrasonic fingerprint recognition sensor provided by the first embodiment of the present invention, as figure 2 As shown, the sensor includes a CMOS backplane layer 1, a buffer layer 2, a PVDF layer 4, and an ITO transmitting electrode 5 arranged in sequence. The CMOS backplane layer 1 includes a CMOS structure 11 and an ITO receiving electrode 12. The buffer layer 2 includes SiNx, ITO The receiving electrodes 12 are embedded in the buffer layer 2 at intervals, wherein an isolation layer 3 is provided between the buffer layer 2 and the PVDF layer 4 to separate the buffer layer 2 from the PVDF 4 .

[0022] Optionally, the isolation layer 3 in this embodiment is composed of spaced columnar structures.

[0023] Optionally, the isolation layer 3 is made of inverse ITO Float metal. Further, the Float metal of the inverse ITO may be, but not limited to, Ti-Al-Ti or Al or Mo.

[0024] Specifically, the Space in the iso...

Embodiment 2

[0030] image 3 is made figure 2 The flow chart of the method of the ultrasonic fingerprint recognition sensor of the shown embodiment, as image 3 shown, including:

[0031] S101 , preparing a CMOS backplane layer, and encapsulating the CMOS backplane layer with SiNx to form a buffer layer; wherein, the CMOS backplane layer includes a CMOS structure and an ITO receiving electrode.

[0032] S102. After the buffer layer is formed, lay a layer of isolation film, and use a photolithography process to form a layer of spaced isolation layer to separate the buffer layer from the PVDF part.

[0033] Optionally, the isolation layer in this embodiment is composed of spaced columnar structures.

[0034] Optionally, the isolation layer is made of inverse ITO Float metal. Further, the Float metal of the inverse ITO may be, but not limited to, Ti-Al-Ti or Al or Mo.

[0035] Optionally, the thickness of the isolation layer is less than or equal to 1000A.

[0036] Optionally, the isol...

Embodiment 3

[0041] Figure 4 is a schematic structural diagram of the ultrasonic fingerprint recognition sensor provided by the second embodiment of the present invention, as Figure 4 As shown, the sensor includes a CMOS backplane layer 1, a buffer layer 2, a PVDF layer 4, and an ITO transmitting electrode 5 arranged in sequence, the CMOS backplane layer 1 includes a CMOS structure 11 and an ITO receiving electrode 12, the buffer layer 2 includes SiNx, and the ITO receiving electrode 5 The electrodes 12 are embedded in the buffer layer 2 at intervals, wherein an isolation layer 3 is provided between the buffer layer 2 and the PVDF layer 4 to completely separate the buffer layer 2 from the PVDF 4 .

[0042] Optionally, the isolation layer 3 in this embodiment is composed of a continuous structure.

[0043] Optionally, the isolation layer 3 is made of inverse ITO Float metal. Further, the Float metal of the inverse ITO may be, but not limited to, Ti-Al-Ti or Al or Mo.

[0044] Optionall...

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Abstract

The invention discloses an ultrasonic wave fingerprint recognition sensor and a manufacture method thereof. The sensor comprises a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) backboard layer, a buffer layer, a PVDF (Polyvinylidene Fluoride) layer and an ITO (Indium Tin Oxide) transmission electrode, wherein the CMOS backboard layer, the buffer layer, the PVDF layer and the ITO transmission electrode are arranged in sequence; the CMOS backboard layer comprises a CMOS structure and ITO receiving electrodes; the buffer layer comprises SiNx, and the ITO receiving electrodes are embedded in the buffer layer at intervals; and an isolation layer is also arranged between the buffer layer and the PVDF layer for partially or completely separating the buffer layer from the PVDF. According to the technical scheme of the embodiment of the invention, the ultrasonic wave fingerprint recognition sensor manufactured by an Array technology can be used and has the advantages of high resolution, signal-to-noise ratio and penetration membrane thickness, and meanwhile, production cost is lowered.

Description

technical field [0001] The present application generally relates to the field of semiconductor technology, specifically to the field of sensor technology, and in particular to an ultrasonic fingerprint recognition sensor and a manufacturing method thereof. Background technique [0002] With the development of fingerprint identification technology, it has been widely used in many fields, such as mobile phones, tablet computers and TVs in electronic equipment terminals, access control and safes in security protection systems, etc. The realization methods of fingerprint collection mainly include optical, capacitive, and ultrasonic imaging technologies. Among them, the recognition realized by ultrasonic fingerprint recognition technology has 3D characteristics, so it is safer, has better user experience and better design, and The cost is relatively low. [0003] figure 1 It is a structural schematic diagram of an ultrasonic fingerprint recognition sensor made according to the ...

Claims

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Application Information

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IPC IPC(8): G06K9/00
CPCG06V40/1306
Inventor 刘文渠张锋吕志军董立文党宁张世政宋晓欣崔钊郑智仁赵利军郭玉珍
Owner BOE TECH GRP CO LTD
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