A memristive switch device based on a-tsc:o ceramic film and its preparation method

A technology of ceramic thin film and switching devices, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of research reports that have not been applied in the field of optoelectronics, and achieve good near-infrared transmittance, good Resistive switching performance, the effect of simple preparation process

Active Publication Date: 2020-03-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Based on the above content, we can see that the existing Ti 3 SiC 2 The development and research of applications mainly focus on high-temperature structural materials, electrode materials, machinable ceramic materials, anti-friction component materials and anti-corrosion protective layers, and there are no research reports on their application in the field of optoelectronics

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  • A memristive switch device based on a-tsc:o ceramic film and its preparation method
  • A memristive switch device based on a-tsc:o ceramic film and its preparation method

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Embodiment 1

[0031] This embodiment provides a memristive switch device, such as figure 1 As shown, its structure from bottom to top is "ITO slide 1, a-TiOx Thin film 2, a-TSC:O thin film 3, a-TSC thin film 4 "vertical four-layer structure," a-TiO x Thin film 2 / a-TSC:O thin film 3" double-layer structure acts as a double resistance layer (that is, the dielectric layer of the memristive switching device).

[0032] This embodiment provides a method for preparing the above-mentioned memristive switch device, and the preparation process includes the following steps:

[0033] Step A: prepare the ITO glass slide 1 as a transparent substrate with a bottom electrode, and perform cleaning and drying according to a standard process;

[0034] Step B: using a titanium target as a raw material target, oxygen and argon as a working gas, and depositing an a-TiOx thin film 2 on an ITO glass substrate 1 by reactive radio frequency sputtering as a first resistive layer;

[0035] Step C: Using Ti 3 SiC 2...

Embodiment 2

[0052] This embodiment provides a method for preparing a memristive switch device, and the preparation process includes the following steps:

[0053] Step A: Prepare a K9 glass substrate as a transparent substrate, and perform cleaning and drying according to standard processes; then deposit an ITO film on it as a bottom electrode;

[0054] Step B: using a titanium target as a raw material target, oxygen and argon as a working gas, and depositing an a-TiOx film on the ITO film by reactive radio frequency sputtering as the first resistive layer;

[0055] Step C: Using Ti 3 SiC 2 The polycrystalline powder is used as the raw material target, oxygen and argon are used as the working gas, and the a-TSC:O film is deposited on the a-TiOx film by reactive radio frequency sputtering as the second resistive layer. The specific operation is as follows:

[0056] C1: Target preparation:

[0057] Ti 3 SiC 2 Add the powder into deionized water and stir evenly to obtain Ti 3 SiC 2 dis...

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Abstract

A memristive switch device based on a-TSC:O ceramic film and a preparation method thereof, belonging to the technical field of optoelectronic devices. Based on the structure of the traditional memristive switch device, the present invention innovatively proposes "a‑TSC:O thin film / a‑TiO x The dielectric layer structure of "thin film" broadens the selection range of dielectric layer materials for memristive switching devices. Since the resistive switching properties of a‑TSC:O thin films can be adjusted in a wide range, and a‑TiO x The film is transparent and can provide an oxygen-vacancy electromigration channel, so that the a-TSC:O film has good resistive switching properties and can be used as a dielectric layer of a memristive switch device. At the same time, since the intrinsic a-TSC ceramic film has very good electrical conductivity and near-infrared transmittance, it can also be used as a top electrode material, and a near-infrared fully transparent memristive switch can be constructed together with the top electrode formed by a transparent conductive film. device. In addition, the present invention proposes that the memristive switch device has a simple preparation process, low cost, and high reliability, which is beneficial to realize large-scale production.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to a memristive switching device based on a-TSC:O ceramic film and a preparation method thereof. Background technique [0002] As a new type of nonlinear device, memristor has received extensive attention from researchers. So far, materials such as Ag, Cu, Au, Pt and W have been used as their electrode materials; a-Si, a-SiO x and TiO 2 Isodielectric films are common resistive layer materials for memristive switching devices. In recent years, researchers at home and abroad have constructed and prepared a variety of memristive switching devices with excellent resistive switching functions based on various electrodes and resistive layer materials, making them the darling of next-generation memory technology. [0003] Ti 3 SiC 2 It is a ternary layered carbide, which is the only MAX phase material containing Si element, and has both ceramic and metal pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/06
CPCC23C14/0036C23C14/06C23C14/083C23C14/35
Inventor 宋宇浩次会聚陈奕丞刘诚李东阳李伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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