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MoO3 sheet assembled network structure nanometer material, and preparation method thereof

A technology of nanomaterials and network structure, applied in the direction of molybdenum oxide/molybdenum hydroxide, etc., can solve the problems that the production of network structure nanomaterials cannot be realized, the preparation process is complicated, and has not been discovered, and it can achieve wide use value, sensitive response performance, and stability. The effect of responsiveness

Active Publication Date: 2018-12-14
金堆城钼业光明(山东)股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the preparation process of these materials is relatively complicated, and it is impossible to realize MoO 3 The production of sheet-assembled network-structured nanomaterials limits the MoO 3 Application of gas sensitive materials in the field of gas detection
Up to now, MoO with uniform morphology and adjustable size has not been found at home and abroad. 3 Related reports on the synthesis method of sheet-assembled network structure nanomaterials

Method used

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  • MoO3 sheet assembled network structure nanometer material, and preparation method thereof
  • MoO3 sheet assembled network structure nanometer material, and preparation method thereof
  • MoO3 sheet assembled network structure nanometer material, and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1.1 Mix 12 mL of N,N-dimethylformamide (DMF), 12 mL of water, and 1 mL of ethanol into a beaker, then add 0.2732 g of molybdenum chloride (MoCl 5 ) and stirred for 0.5 h, then added 0.0415 g of 2-aminoterephthalic acid and 0.0010 g of 2-methylimidazole and stirred for 0.5 h, then added 0.3000 g of polyvinylpyrrolidone (PVP) and stirred for 0.5 h to form a mixed solution.

[0041] 1.2 Transfer the obtained mixed solution to a reaction kettle, seal it and put it into a vacuum drying oven, set the parameters as follows: 160°C, keep it warm for 10 hours, then centrifuge, wash and dry to obtain the precursor.

[0042] 1.3 Place the precursor in a muffle furnace, and raise the temperature from room temperature to 450 °C at a rate of 2 °C / min in an air atmosphere, and keep the temperature for 2 h. After the sample is cooled with the furnace, the product is obtained.

[0043] The XRD result of the product is as follows figure 1 As shown, it can be seen from the figure that all...

Embodiment 2

[0045] 2.1 Mix 15 mL of N,N-dimethylformamide (DMF), 11 mL of water, and 1 mL of ethanol into a beaker, then add 0.3036 g of MoCl 5 Stir for 0.5 h, then add 0.0508 g of 2-aminoterephthalic acid and 0.0018 g of 2-methylimidazole and stir for 0.5 h, then add 0.3398 g of polyvinylpyrrolidone (PVP) and stir for 0.5 h to form a mixed solution.

[0046] 2.2 Transfer the obtained mixed solution to a reaction kettle, seal it and put it into a vacuum drying oven, set the parameters as follows: 150°C, keep it warm for 12 hours, then centrifuge, wash and dry to obtain the precursor.

[0047] 2.3 Place the precursor in a muffle furnace, and raise the temperature from room temperature to 450 °C at a rate of 2 °C / min in an air atmosphere, and keep it for 2 h. After the sample is cooled with the furnace, the product MoO is obtained. 3 The size of the network structure nanomaterials assembled by the sheet is 4.5-5.0 μm, and the thickness of the sheet is 0.45-0.60 μm.

Embodiment 3

[0049] 3.1 Mix 12 mL of N,N-dimethylformamide (DMF), 15 mL of water, and 1 mL of ethanol into a beaker, then add 0.3312 g of MoCl 5 Stir for 0.5 h, then add 0.0608 g of 2-aminoterephthalic acid and 0.0013 g of 2-methylimidazole and stir for 0.5 h, then add 0.3828 g of polyvinylpyrrolidone (PVP) and stir for 0.5 h to form a mixed solution.

[0050] 3.2 Transfer the obtained mixed solution to a reaction kettle, seal it and put it into a vacuum drying oven, set the parameters as follows: 150°C, keep it warm for 10 hours, then centrifuge, wash and dry to obtain the precursor.

[0051] 3.3 Put the precursor in the muffle furnace, raise the temperature from room temperature to 400 °C at a rate of 1 °C / min in the air atmosphere, and keep it for 2 h. After the sample is cooled with the furnace, the product MoO is obtained. 3 The sheet-assembled network structure nanomaterial has a size of 4.0-4.5 μm and a sheet thickness of 0.40-0.53 μm.

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Abstract

The invention discloses a MoO3 sheet assembled network structure nanometer material, and a preparation method thereof, and belongs to the technical field of material preparation. The preparation method comprises following steps: N, N-dimethylformamide is mixed with water and ethanol, a soluble molybdenum salt, 2-aminoterephthalic acid, 2-methylimidazole, and polyvinylpyrrolidone are added successively for uniform stirring so as to obtain a solution; the solution is subjected to hydrothermal reaction, an obtained product is subjected to centrifugation and washing drying so as to obtain a precursor; the precursor is subjected to heat reaction so as to obtain the MoO3 sheet assembled network structure nanometer material. Hydrothermal method and heat treatment are combined in the preparation method, so that the MoO3 material with a sheet assembled network structure is obtained. The adopted raw materials are common reagents, are cheap and easily available; the reaction process is easy to control; the prepared MoO3 sheet assembled network structure nanometer material is uniform in morphology, high in stability, and high in application value in the gas sensitive field.

Description

technical field [0001] The invention relates to a uniform and adjustable MoO 3 Nanomaterial and preparation method thereof, specifically relate to a kind of MoO 3 A sheet-assembled network structure nanometer material and a preparation method thereof belong to the technical field of material preparation. Background technique [0002] Semiconductor transition metal oxides usually have a layered structure, which is conducive to the intercalation and deintercalation of ions, and has become a type of gas-sensing material that has been studied more in recent years. When the semiconductor metal oxide gas-sensing material detects gas, it uses the adsorption and desorption properties of the material, resulting in a change in the resistance of the material, thereby causing a change in the current. Because semiconductor gas-sensing materials can exhibit stable and sensitive response performance to specific gases, they have a wide range of application values ​​in the field of gas det...

Claims

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Application Information

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IPC IPC(8): C01G39/02
CPCC01G39/02C01P2002/72C01P2004/03C01P2004/20C01P2004/61C01P2004/62
Inventor 李世伟黄立峰孟庆乐褚姝姝李绘马谦
Owner 金堆城钼业光明(山东)股份有限公司
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