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a kind of moo 3 Sheet-assembled network structure nanomaterial and preparation method thereof

A nanomaterial and network structure technology, applied in the direction of molybdenum oxide/molybdenum hydroxide, etc., can solve the problems such as undiscovered, unable to realize the production of network structure nanomaterials, complicated preparation process, etc.

Active Publication Date: 2021-06-15
金堆城钼业光明(山东)股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the preparation process of these materials is relatively complicated, and it is impossible to realize MoO 3 The production of sheet-assembled network-structured nanomaterials limits the MoO 3 Application of gas sensitive materials in the field of gas detection
Up to now, MoO with uniform morphology and adjustable size has not been found at home and abroad. 3 Related reports on the synthesis method of sheet-assembled network structure nanomaterials

Method used

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  • a kind of moo <sub>3</sub> Sheet-assembled network structure nanomaterial and preparation method thereof
  • a kind of moo <sub>3</sub> Sheet-assembled network structure nanomaterial and preparation method thereof
  • a kind of moo <sub>3</sub> Sheet-assembled network structure nanomaterial and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1.1 Mix 12 mL of N,N-dimethylformamide (DMF), 12 mL of water, and 1 mL of ethanol into a beaker, then add 0.2732 g of molybdenum chloride (MoCl 5 ) and stirred for 0.5 h, then added 0.0415 g of 2-aminoterephthalic acid and 0.0010 g of 2-methylimidazole and stirred for 0.5 h, then added 0.3000 g of polyvinylpyrrolidone (PVP) and stirred for 0.5 h to form a mixed solution.

[0041] 1.2 Transfer the obtained mixed solution to a reaction kettle, seal it and put it into a vacuum drying oven, set the parameters as follows: 160°C, keep it warm for 10 hours, then centrifuge, wash and dry to obtain the precursor.

[0042] 1.3 Place the precursor in a muffle furnace, and raise the temperature from room temperature to 450 °C at a rate of 2 °C / min in an air atmosphere, and keep the temperature for 2 h. After the sample is cooled with the furnace, the product is obtained.

[0043] The XRD result of the product is as follows figure 1 As shown, it can be seen from the figure that all...

Embodiment 2

[0045] 2.1 Mix 15 mL of N,N-dimethylformamide (DMF), 11 mL of water, and 1 mL of ethanol into a beaker, then add 0.3036 g of MoCl 5 Stir for 0.5 h, then add 0.0508 g of 2-aminoterephthalic acid and 0.0018 g of 2-methylimidazole and stir for 0.5 h, then add 0.3398 g of polyvinylpyrrolidone (PVP) and stir for 0.5 h to form a mixed solution.

[0046] 2.2 Transfer the obtained mixed solution to a reaction kettle, seal it and put it into a vacuum drying oven, set the parameters as follows: 150°C, keep it warm for 12 hours, then centrifuge, wash and dry to obtain the precursor.

[0047] 2.3 Place the precursor in a muffle furnace, and raise the temperature from room temperature to 450 °C at a rate of 2 °C / min in an air atmosphere, and keep it for 2 h. After the sample is cooled with the furnace, the product MoO is obtained. 3 The size of the network structure nanomaterials assembled by the sheet is 4.5-5.0 μm, and the thickness of the sheet is 0.45-0.60 μm.

Embodiment 3

[0049] 3.1 Mix 12 mL of N,N-dimethylformamide (DMF), 15 mL of water, and 1 mL of ethanol into a beaker, then add 0.3312 g of MoCl 5 Stir for 0.5 h, then add 0.0608 g of 2-aminoterephthalic acid and 0.0013 g of 2-methylimidazole and stir for 0.5 h, then add 0.3828 g of polyvinylpyrrolidone (PVP) and stir for 0.5 h to form a mixed solution.

[0050] 3.2 Transfer the obtained mixed solution to a reaction kettle, seal it and put it into a vacuum drying oven, set the parameters as follows: 150°C, keep it warm for 10 hours, then centrifuge, wash and dry to obtain the precursor.

[0051] 3.3 Put the precursor in the muffle furnace, raise the temperature from room temperature to 400 °C at a rate of 1 °C / min in the air atmosphere, and keep it for 2 h. After the sample is cooled with the furnace, the product MoO is obtained. 3 The sheet-assembled network structure nanomaterial has a size of 4.0-4.5 μm and a sheet thickness of 0.40-0.53 μm.

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Abstract

The invention discloses a MoO 3 A sheet-assembled network structure nanometer material and a preparation method thereof belong to the technical field of material preparation. MoO of the present invention 3 The preparation method of the sheet-assembled network structure nanomaterial first mixes N,N-dimethylamide with water and ethanol, and then sequentially adds soluble molybdenum salt, 2-aminoterephthalic acid, 2-methylimidazole, and polyvinylpyrrolidone Stir evenly to obtain a solution; after the solution is hydrothermally reacted, the product is centrifuged, washed and dried to obtain a precursor; the precursor is thermally reacted to obtain MoO 3 Sheet-assembled network-structured nanomaterials. The present invention adopts the combination of hydrothermal method and heat treatment to prepare MoO with sheet-assembled network structure 3 Materials, the raw materials used are all common reagents, the source is wide, the price is cheap, and the reaction process is easy to control. The prepared MoO 3 The network structure nanomaterial product assembled by the sheet has uniform appearance and good stability, and has a wide range of application values ​​in the field of gas sensing.

Description

technical field [0001] The invention relates to a uniform and adjustable MoO 3 Nanomaterial and preparation method thereof, specifically relate to a kind of MoO 3 A sheet-assembled network structure nanometer material and a preparation method thereof belong to the technical field of material preparation. Background technique [0002] Semiconductor transition metal oxides usually have a layered structure, which is conducive to the intercalation and deintercalation of ions, and has become a type of gas-sensing material that has been studied more in recent years. When the semiconductor metal oxide gas-sensing material detects gas, it uses the adsorption and desorption properties of the material, resulting in a change in the resistance of the material, thereby causing a change in the current. Because semiconductor gas-sensing materials can exhibit stable and sensitive response performance to specific gases, they have a wide range of application values ​​in the field of gas det...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G39/02
CPCC01G39/02C01P2002/72C01P2004/03C01P2004/20C01P2004/61C01P2004/62
Inventor 李世伟黄立峰孟庆乐褚姝姝李绘马谦
Owner 金堆城钼业光明(山东)股份有限公司
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