Device and method of removing particles on surface of wafer
A particle and wafer technology, which is applied in the field of devices for removing particles on the surface of the wafer, can solve problems such as damage to the film on the surface of the wafer, and achieve the effects of reducing production costs, easy replacement, and reducing damage
Inactive Publication Date: 2018-12-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The main purpose of the present invention is to provide a device and method for removing particles on the wafer surface, so as to solve the problem that the process of cleaning the wafer surface in the prior art easily causes damage to the film on the wafer surface
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the present invention will be described in detail with reference to the drawings and in conjunction with the embodiments.
[0031] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is a part of the embodiments of the present invention, not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0032] It should be noted that the terms "fir...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a device and a method for removing particles on the surface of a wafer. The device comprises a dust collecting box and a negative pressure device, wherein the negative pressuredevice is provided with an air inlet and an air outlet, and the air inlet and the air outlet are oppositely arranged on the two sides of the dust collecting box; the negative pressure device is arranged inside the dust collecting box and is used for generating negative pressure inside the dust collecting box; and due to the fact that the particles on the surface of the wafer are in a physical adsorption state, moreover, the adsorption energy is small, adsorbed substances can be easily separated from the surface of the adsorption substances, so that the particles on the surface of the wafer canbe sucked inside the dust collecting box along with a fluid under the action of differential pressure through the negative pressure generated inside the dust collecting box by adopting the device, and effective removal of the particles on the surface of the wafer is realized by changing the flow velocity of the fluid. The device is simple in structure and replacement and maintenance are easy, andthe damage to a thin film formed by mechanical force on the surface of the wafer in a traditional technology can be greatly reduced; and the device does not need to consume deionized water at all, the production cost is reduced, the scanning speed is very fast, and the production efficiency is effectively improved.
Description
Technical field [0001] The present invention relates to the technical field of semiconductor technology, in particular to a device and method for removing particles on the surface of a wafer. Background technique [0002] In integrated circuit manufacturing, chemical vapor deposition (CVD) is an extremely important process. In the CVD coating process, the adhesion of particles on the surface of the film will greatly affect the yield of devices and chips. In actual production, it is often necessary to rework the problematic wafer for this kind of particle adhesion. [0003] The device for removing particles on the wafer surface in the prior art usually uses a special soft brush 10' and sprays ionized water through a deionized water nozzle 20' to clean the particles on the surface of the wafer 30', such as figure 1 Shown. However, this mechanical treatment method will inevitably cause damage to the surface of the film, and will also consume a lot of water resources and increase pro...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): B08B5/04H01L21/67B03C3/04
CPCB03C3/04B08B5/04H01L21/67028
Inventor 邹雄峰韦亚一
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI