Preparation method of zno linear resistor with adjustable porosity

A technology of linear resistance and porosity, applied in the manufacture of resistors, resistors, circuits, etc., can solve problems such as inability to meet heat dissipation, strength and light weight, difficulty in controlling porosity, and inability to adapt to use requirements

Active Publication Date: 2021-07-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the porosity of the existing ZnO linear resistance is difficult to control, and cannot meet the needs of heat dissipation, strength and light weight, and cannot adapt to the use requirements of more occasions, which has become an urgent technical problem to be solved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] In this embodiment, a preparation method of a ZnO linear resistor, the specific steps are as follows:

[0037] a. Preparation of additives:

[0038] a1. 627g of ZnO powder, 393g of Al 2 o 3 Powder, 78g of MgO powder and 3000g of deionized water are mixed, put into the ball mill, after ball milling for 24 hours, pass through a 120 mesh sieve, and collect the mixed slurry;

[0039] a2. Then dry the mixed slurry at 100-120°C and pulverize it into a powder, then calcinate the obtained powder at a high temperature of 1150°C for 2 hours, then pulverize the calcined product and pass it through a 30-mesh sieve to obtain a powder;

[0040] a3. Mix the powder with deionized water to achieve a solid content of 60% by mass, then add it to a ball mill, and perform ball milling for 48 hours, so that the particle size of the mixed slurry reaches 0.907 μm, and then dry and pulverize to obtain additive powder;

[0041] b. Preparation of total slurry:

[0042] Mix 500g of the additi...

Embodiment 2

[0054] This embodiment is basically the same as Embodiment 1, especially in that:

[0055] In this embodiment, a preparation method of a ZnO linear resistor, the specific steps are as follows:

[0056] a. Preparation of additives:

[0057] a1. 627g of ZnO powder, 393g of Al 2 o 3 Powder, 78g of MgO powder and 3000g of deionized water are mixed, put into the ball mill, after ball milling for 24 hours, pass through a 120 mesh sieve, and collect the mixed slurry;

[0058] a2. Then dry the mixed slurry at 100-120°C and pulverize it into a powder, then calcinate the obtained powder at a high temperature of 1150°C for 2 hours, then pulverize the calcined product and pass it through a 30-mesh sieve to obtain a powder;

[0059] a3. Mix the powder with deionized water to achieve a solid content of 60% by mass, then add it to a ball mill, and perform ball milling for 48 hours, so that the particle size of the mixed slurry reaches 0.907 μm, and then dry and pulverize to obtain additi...

Embodiment 3

[0073] This embodiment is basically the same as the previous embodiment, and the special features are:

[0074] In this embodiment, a preparation method of a ZnO linear resistor, the specific steps are as follows:

[0075] a. Preparation of additives:

[0076] a1. 627g of ZnO powder, 393g of Al 2 o 3 Powder, 78g of MgO powder and 3000g of deionized water are mixed, put into the ball mill, after ball milling for 24 hours, pass through a 120 mesh sieve, and collect the mixed slurry;

[0077] a2. Then dry the mixed slurry at 100-120°C and pulverize it into a powder, then calcinate the obtained powder at a high temperature of 1150°C for 2 hours, then pulverize the calcined product and pass it through a 30-mesh sieve to obtain a powder;

[0078] a3. Mix the powder with deionized water to achieve a solid content of 60% by mass, then add it to a ball mill, and perform ball milling for 48 hours, so that the particle size of the mixed slurry reaches 0.907 μm, and then dry and pulver...

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Abstract

The invention discloses a method for preparing ZnO linear resistance with adjustable porosity. No additional process is added in the process of preparing ZnO linear resistance, the method is simple and easy to operate, and graphite powder introduced in the process of preparing ZnO linear resistance can effectively exclude. The graphite powder used is non-toxic, low in price, easy to obtain, and the volatilization of organic matter and carbon gasification products in the sintering process are easy to collect and process, without environmental pollution, and without residue after sintering. Without changing the composition of the ZnO linear resistance element and without affecting the performance of the ZnO linear resistance element, the precise control of the porosity of the ZnO linear resistance element can be realized, so as to meet the various needs of heat dissipation, strength and light weight. The prepared ZnO linear resistance element can meet the application requirements of more occasions.

Description

technical field [0001] The invention relates to a method for preparing a linear resistor, in particular to a method for preparing a ZnO linear resistor, which is applied in the technical field of resistive electrical components. Background technique [0002] ZnO ceramic linear resistor is an electrical component with high energy density and good linearity. At the same time, it is less affected by temperature, and the temperature coefficient of resistance is a small positive number. It has been widely used in various energy-absorbing occasions. However, the existing ZnO linear resistance porosity is difficult to control, and cannot meet the needs of heat dissipation, strength and light weight, and cannot adapt to the use requirements of more occasions, which has become a technical problem to be solved urgently. Contents of the invention [0003] In order to solve the problems of the prior art, the object of the present invention is to overcome the deficiencies in the prior ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453H01C17/30H01C17/00
CPCC04B35/453C04B2235/3206C04B2235/3217C04B2235/425C04B2235/608C04B2235/96H01C17/00H01C17/30
Inventor 任鑫徐希姚政施利毅时雯
Owner SHANGHAI UNIV
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