Ion implantation method, manufacturing method of semiconductor device, and semiconductor device

Abstract

The invention provides an ion implantation method, a semiconductor device manufacturing method and a semiconductor device, wherein the ion implantation method comprises the following steps: Step S1, aglass substrate is provided, and at least a channel doped region and a gate insulating layer are sequentially fabricated on the glass substrate; step S2, a channel doped region and a gate insulatinglayer are sequentially formed on the glass substrate; Step S2, plate metals on that surface of the gate insulate layer to form a metal film layer; Step S3, carry out patterning processing on that metal film layer to form a metal mask, wherein the metal mask is formed with a strand empty window at positions correspond to the two ends of the channel doping region; Step S4, ion implantation is performed with the metal mask as a mask plate, and source doping regions and drain doping regions are formed at both ends of the channel doping region. The invention can realize no gas molecule overflow inthe ion implantation process, ensure the ion implantation effect and the control of the ion implantation amount, improve the electric convergence of the device, and increase the implantation current due to the absence of gas overflow.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an ion implantation method, a manufacturing method of a semiconductor device and a semiconductor device. Background technique [0002] In the ion implantation process, due to capacity requirements, it is necessary to use a large current to perform ion implantation on the glass substrate coated with photoresist. The thermal effect will volatilize from the glass substrate (Outgas); the collision of ions and gas molecules during ion implantation leads to the electrical neutralization of doped ions. specifically, , In the glass, these neutral ions lead to uneven doping, and at the same time cannot be detected by the Faraday cup of the IMP machine, resulting in inaccurate counting of the implanted dose. In view of the above problems, it is urgent to propose a new ion implantation method so that neutral ions are not generated during the ion implantation process, thereb...

AI Technical Summary

Problems solved by technology

specifically, , in the glass, these neutral ions lead to uneven doping, and cannot be detected by the Faraday cup of the IMP machine, resulting in inaccurate counting of the implanted dose

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