Schottky diode and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductor devices, and provides a Schottky diode and a manufacturing method thereof. The Schottky diode comprises a silicon epitaxial wafer where aplurality of trenches are formed, and openings of the plurality of trenches facing the upper surface of the silicon epitaxial wafer; an oxide layer covering an inner surface of the plurality of trenches; a polysilicon layer that fills a space of the plurality of trenches other than the oxide layer; a dielectric layer arranged on the upper surface of the silicon epitaxial wafer; an anode metal layer disposed on the dielectric layer and extending into a Schottky contact hole to cover a bottom of the Schottky contact hole, wherein the Schottky contact hole penetrates the dielectric layer; and a cathode metal layer arranged on the lower surface of the silicon epitaxial wafer; wherein the projection of the Schottky contact hole on the silicon epitaxial wafer and the projection of the dielectriclayer on the silicon epitaxial wafer cover at least one of the trenches. The Schottky diode of the present invention can optimize a device structure and VF characteristics.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a Schottky diode and a manufacturing method of the Schottky diode. Background technique [0002] Schottky diodes are generally a better choice for high frequency electronic applications where low forward conduction energy loss is critical due to their high switching speed and low forward (on-state) voltage drop. But until recently, silicon-based Schottky diodes for most applications were limited to operating voltages below 100V. Traditionally, the reverse blocking voltage of Schottky diodes has been limited by voltages much lower than 200V. This is partly due to the fact that when the reverse blocking capability is close to 200V, the forward voltage drop or forward conduction voltage (VF) of the Schottky diode will be close to the forward voltage drop of the PIN diode, making it less efficient in the application . Therefore, it is necessary to propose a Schottky ...

AI Technical Summary

Problems solved by technology

But until recently, silicon-based Schottky diodes for most applications were limited to operating voltages below 100V

Historically, the reverse blocking voltage of Schottky diodes has been limited by voltages much lower than 200V

This is partly due to the fact that when the reverse blocking capability is close to 200V, the forward voltage drop or forward conduction voltage (VF) of the Schottky diode will be close to the forward voltage drop of the PIN diode, making it less efficient in the application

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