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Temperature-Controlled Remote Plasma Cleaning for Emission Deposition Removal

A remote plasma and controller technology, applied in the direction of discharge tube, separation method, dispersed particle separation, etc., can solve problems such as extension

Active Publication Date: 2021-11-16
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The formation of chlorosiloxanes further prolongs the time required for cleaning and maintenance due to the extra precautions taken by the operator

Method used

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  • Temperature-Controlled Remote Plasma Cleaning for Emission Deposition Removal
  • Temperature-Controlled Remote Plasma Cleaning for Emission Deposition Removal
  • Temperature-Controlled Remote Plasma Cleaning for Emission Deposition Removal

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Embodiment Construction

[0012] Aspects of the present disclosure generally relate to methods and apparatus for cleaning exhaust systems, such as exhaust systems used with processing chambers for forming epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source. Note that use of the methods and apparatus described herein is contemplated for other processes, such as etching, or deposition of materials other than epitaxial silicon.

[0013] figure 1 is a schematic illustration of a processing system 100 according to one aspect of the present disclosure. Processing system 100 includes a processing chamber 101 (eg, an epitaxial deposition reactor) coupled to an exhaust system 102 . Exhaust system 102 is coupled to vacuum pump 103 at a downstream end of exhaust system 102 to facilitate flow of exhaust to scrubber 122 located downstream of exhaust system 1...

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PUM

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Abstract

Embodiments of the present disclosure generally relate to methods and apparatus for cleaning exhaust systems, such as exhaust systems used with processing chambers for forming epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.

Description

technical field [0001] Aspects of the present disclosure generally relate to methods and apparatus for cleaning exhaust systems, such as exhaust systems of process chambers used to form epitaxial silicon. Background technique [0002] Epitaxial silicon is deposited in a processing chamber using a silicon-containing precursor gas. After a predetermined number of deposition cycles in the processing chamber, the processing chamber is purged with a chlorine-containing gas. Chlorine radicals from the chlorine-containing gas react with the silicon to form chlorosilanes, which are vented from the processing chamber. Chlorosilanes are combustible materials that deposit on the interior surfaces of the exhaust system and must be removed periodically. Depending on the degree of removal desired, the wash time to remove chlorosilanes can range from half a day long to a month. In addition, chlorosilanes can react with oxygen in the atmosphere after the exhaust system is disassembled, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01D53/32
CPCB08B7/0035C30B25/14C30B29/06H01J37/32357H01J37/32834H01J37/32963H01J2237/335B01D53/32B01D2259/818
Inventor 马丁·A·希尔金戴维·K·卡尔森马修·D·斯科特奈伊卡斯尔
Owner APPLIED MATERIALS INC